Electrical Engineering

Indian Institute of Technology Bombay

EE 620 – Physics of Transistors

EE 620 – Physics of Transistors

EE 620 – Physics of Transistors

EE 620 – Physics of Transistors

The MOS transistor: Pao-Sah and Brews models; Short channel effects in MOS transistors. Hot-carrier effects in MOS transistors; Quasi-static compact models of MOS transistors; Measurement of MOS transistor parameters; Scaling and transistors structures for ULSI; Silicon-on-insulator transistors; High-field and radiation effects in transistors; The bipolar transistor: Ebers-Moll model; charge control model; small-signal and switching characteristics; Graded-base and graded-emitter transistors; High-current and high-frequency effects; Heterojunction bipolar transistors; Junction FETs; JFET, MESFET and heterojunction FET.

Latest Semester

2021-2022 Spring

Programs

PG

Latest Instructor

Substitutions

Not Applicable

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EE 620 – Physics of Transistors

Latest Semester

2021-2022 Spring

Programs

PG

Latest Instructor

Substitutions

Not Applicable

EE 620 – Physics of Transistors

Latest Semester

2021-2022 Spring

Programs

PG

Latest Instructor

Substitutions

Not Applicable

IIT Bombay was established in the year 1957 and the department of Electrical Engineering (EE) has been one of its major departments since its inception.

Contact Us

IIT Bombay was established in the year 1957 and the department of Electrical Engineering (EE) has been one of its major departments since its inception.

Contact Us

IIT Bombay was established in the year 1957 and the department of Electrical Engineering (EE) has been one of its major departments since its inception.

Contact Us

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© , IITB. All rights reserved.

About | IITBEducation | Research | Site Map | Feedback | RTI | Contact Us

© 2023, IITB. All rights reserved.