A selection of topics from the following: Basic Growth Concepts: growth modes; crystallization phenomena; defects. Fundamentals and analysis of epitaxy: liquid phase epitaxy; molecular beam epitaxy; Chemical vapour deposition; LPCVD examples (SiO2, Si3N4, Poly-Si, Silicon epitaxy); MOCVD, examples: dielectrics, epitaxy of III-V; PECVD; ALD. Material Systems and Structures: GaAs and InP based materials: AlGaAs, GaInAs and InGaAsP; substrates, material purity, doping, ordering; heterostructures, interfaces; strained layer growth, critical thickness; Group III-nitrides: AlGaInN and InGaAsN; Device structures: Detectors, Lasers, HEMTs. Characterization of Nanoelectronic Materials: Photoluminescence; X-Ray diffraction; Transmission Electron Microscopy; Deep Level Transient spectroscopy; Atomic Force Microscopy; Secondary Electron Microscopy.