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Electrical Engineering

Indian Institute of Technology Bombay

Electrical Engineering

Indian Institute of Technology Bombay

People

People

Faculty

Subhananda Chakrabarti
Subhananda Chakrabarti iit bombay
Qualifications

• Ph.D Calcutta University
• M.Sc Calcutta University

Research Interests

• III-V Compound semiconductor materials growth and characterization
• Optoelectronic Devices of interest includes quantum dot photodetectors and Solar cells
• III-V device integration on germanium

Work Experience

• Professor: dept. of electrical engineering, indian institute of technology bombay, powai, mumbai 400 076, maharashtra, india, from sep. 2014
• Associate professor: dept. of electrical engineering, indian institute of technology bombay, powai, mumbai 400 076, maharashtra, india, from feb. 2009- aug. 2014
• Assistant professor: dept. of electrical engineering, indian institute of technology bombay, powai, mumbai 400 076, maharashtra, india, from sep. 2007- feb. 2009
• Senior researcher (ra2): dept. of electronics & electrical engineering., university of glasgow (glasgow, uk) aug, 2006-sep. 2007
• Senior researcher: national center for plasma science & technology, school of physical sciences, dublin city university (dublin, ireland),nov, 2005- aug, 2006
• Senior research fellow: dept. of elec. engr. & comp. sc., university of michigan (ann arbor, mi,usa)may, 2001-sep, 2005
• Lecturer: dept. of physics, st. xavier’s college, 30 park street, calcutta 700 016, india. 1997-2000

Journal Papers

  1. Raveesh Gourishetty, Saranya Reddy Shriram, Debi Prasad Panda, Subhananda Chakrabarti, "Analytical Model and Experimental Analysis to Estimate the Interdiffusion and Optoelectronic Properties of Coupled InAs Quantum Dots Post Rapid Thermal Processing", IEEE Transactions on Electron Devices, May 2022. [DOI]
  2. Saranya Reddy Shriram, Raveesh Gourishetty, and Subhananda Chakrabarti, "Quaternary – alloyed capping for strain and band engineering in InAs sub – monolayer quantum dots", Micro and Nanostructures, Mar. 2022. [DOI]
  3. Saranya Reddy Shriram, Raveesh Gourishetty, Debiprasad Panda, Debabrata Das, Suryansh Dongre, Jhuma Saha, and Subhananda Chakrabarti, "Subsiding strain-induced In-Ga intermixing in InAs/In Ga1?As sub-monolayer quantum dots for room temperature photodetectors", Infrared Physics & Technology, vol. 121, pp. 104047, Mar. 2022. [DOI]
  4. Raveesh Gourishetty and Subhananda Chakrabarti, "Effects of In, Sb and N alloyed capping on the electronic band structures of vertically coupled InAs SK-SML quantum dot system", IEEE Transactions on Nanotechnology, Dec. 2021. [DOI]
  5. Raveesh Gourishetty, Debiprasad Panda, Suryansh Dongre, Jhuma Saha, Sanowar Alam Gazi, Subhananda Chakrabarti, "Hybrid strain-coupled multilayer SK and SML InAs/GaAs quantum dot heterostructure: Enabling higher absorptivity and strain minimization for enhanced optical and structural characteristics", Journal of Luminescence, vol. 233, no. 117899, Jan. 2021. [DOI]
  6. Ravindra Kumar, Jhuma Saha, Debiprasad Panda, Ravinder Kumar, Sanowar Alam Gazi, Raveesh Gourishetty, Subhananda Chakrabarti, "Ameliorating the optical and structural properties of InAs quantum dot heterostructures through digital alloy capping materials: Theory and experiment", Optical Materials, Sep. 2020. [DOI]
  7. Debiprasad Panda, Aijaz Ahmad, Hemant Ghadi, Sourav Adhikary, Binita Tongbram, and Subhananda Chakrabarti, "Evidence of quantum dot size uniformity in strain-coupled multilayered In(Ga)As/GaAs QDs grown with constant overgrowth percentage", Journal of Luminescence, Jul. 2017.
  8. H. S. Gupta, A S K. Kumar, S. Chakrabarti, S. Paul, RM Parmar, DRM Shamudraiah, M.Shojaei Baghini, and D. K. Sharma, "Design of Large dynamic range, low power, High precision ROIC for Quantum Dot Infrared Photo-detector", Electronics Letters, vol. 49, no. 16, pp. 1018 – 1020, Aug. 2013.
  9. S. Adhikary and S. Chakrabarti, "A detailed investigation on the impact of post-growth annealing on the materials and device characteristics of 35-layer In0.50Ga0.50As/GaAs quantum dot infrared photodetector with quaternary In0.21Al0.21Ga0.58As capping", Materials Research Bulletin, vol. 47, no. 11, pp. 3317-3322, Nov. 2012.
  10. S. Shah, N. Halder, S. Sengupta, and S. Chakrabarti, "Comparison of Luminescence Properties of Bilayer and Multilayer InAs/GaAs Quantum Dots", Materials Research Bulletin, vol. 47, no. 1, pp. 130-134, Jan. 2012.
  11. jit V. Barve, Saumya Sengupta, Jun Oh Kim, John Montoya, Brianna Klein, Mohammad Ali Shirazi-HD,Marziyeh Zamiri, Yagya D. Sharma,Sourav Adhikary, Sebastián E. Godoy, Woo-Yong Jang, Glauco R. C. Fiorante, S. Chakrabarti and Sanjay Krishna, "Barrier Selection Rules for Quantum Dots-in-a-Well Infrared Photodetector", IEEE Journal of Quantum Electronics, 2012.
  12. S. Sengupta, J. O. Kim, A.V. Barve, S. Adhikary, Y.D. Sharma, N. Gautam, S. J. Lee, S. K. Noh, S. Chakrabarti and S. Krishna, "Sub-monolayer quantum dots in confinement enhanced dots-in-a-well heterostructure", Applied Physics Letters, vol. 100, 2012.
  13. S. Nagar and S. Chakrabarti, "Effect of phosphorus irradiation on the structural, electrical, and optical characteristics of ZnO thin films", Journal of Luminescence, vol. 132, pp. 1089-1094, 2012.
  14. S. Banerjee, N. Halder and S. Chakrabarti, "Self-assembled InGaAs/GaAs Quantum Dot Photodetector on Germanium substrate", Physica Status Solid C, vol. 9, no. 2, pp. 322-325, 2012.
  15. S. Adhikary and S. Chakrabarti, "A detailed investigation on the impact of post-growth annealing on the materials and device characteristics of 35-layer In0.50Ga0.50As/GaAs quantum dot infrared photodetector with quaternary In0.21Al0.21Ga0.58As capping", Materials Research Bulletin, 2012.
  16. R. Makhijani, N. Halder, S. Sengupta and S. Chakrabarti, "Temperature Dependent Photoluminescence Investigation of the Effect of Growth Pause Induced Ripening in InAs/GaAs Quantum Dot Heterostructures", Materials Research Bulletin, vol. 47, no. 3, pp. 820–825, 2012.
  17. N. Halder, S. Adhikary and S. Chakrabarti, "Inhibition of emission wavelength blueshift in annealed InAs/GaAs quantum dot stacks: An important observation for their potential application in photovoltaic devices", Applied Physics A: Materials Science and Processing, vol. 107, no. 4, pp. 977-983, 2012.
  18. A.V. Barve, S. Meesala, S. Sengupta, J. O. Kim, S. Chakrabarti and S. Krishna, "Investigation of Non-uniform Electric Field in Intersubband Quantum Infrared Photodetectors", Applied Physics Letters, vol. 100, 2012.
  19. A. Mandal, N. Halder, U. Verma and S. Chakrabarti, "The impact of monolayer coverage, barrier thickness and growth rate on the thermal stability of photoluminescence of coupled InAs/GaAs quantum dot hetero-structure with quaternary capping of InAlGaAs", Materials Research Bulletin, vol. 47, no. 3, pp. 551–556, 2012.
  20. R. Sreekumar, A. Mandal, and S. Chakrabarti, "Effect of high energy proton irradiation on InAs/GaAs quantum dots: Enhancement of photoluminescence efficiency (upto ~ 7 times) with minimum spectral signature shift", Materials Research Bulletin, vol. 46, no. 11, pp. 1786-1793, Nov. 2011.
  21. R. Sreekumar, A. Mandal and S. Chakrabarti, "Effect of high energy proton irradiation on InAs/GaAs quantum dots: Enhancement of photoluminescence efficiency (upto ~ 7 times) with minimum spectral signature shift", Materials Research Bulletin, vol. 46, no. 11, pp. 1786-1793, Nov. 2011.
  22. K. Ghosh, S. Kundu, N. Halder, S. Messala and S. Chakrabarti, "Annealing of In0.45Ga0.55As/GaAs quantum dots overgrown with large monolayer (11 ML) coverage for applications in thermally stable optoelectronic devices", Solid State Communication, vol. 151, pp. 1394-1399, Oct. 2011.
  23. S Adhikary, N Halder, and S Chakrabarti, "Thermal stability of the peak emission wavelength in multilayer InAs/GaAs QDs capped with a combination capping of InAlGaAs and GaAs", Journal of Nanoscience and Nanotechnology, vol. 11, no. 5, pp. 4067-4072, May 2011.
  24. S Adhikary, N Halder and S Chakrabarti, "Thermal stability of the peak emission wavelength in multilayer InAs/GaAs QDs capped with a combination capping of InAlGaAs and GaAs", Journal of Nanoscience and Nanotechnology, vol. 11, no. 5, pp. 4067-4072, May 2011.
  25. S. Sengupta, S. Shah, N. Halder, and S. Chakrabarti, "Investigation of larger monolayer coverage in the active layer of the bilayer InAs/GaAs quantum dot structure and effects of post-growth annealing", Applied Physics A: Materials Science and Processing, vol. 103, no. 1, pp. 245-250, Apr. 2011.
  26. S. Sengupta, S. Shah, N. Halder and S. Chakrabarti, "Investigation of larger monolayer coverage in the active layer of the bilayer InAs/GaAs quantum dot structure and effects of post-growth annealing", Applied Physics A: Materials Science and Processing, vol. 103, no. 1, pp. 245-250, Apr. 2011.
  27. S. Chakrabarti, S. Adhikary, N. Halder, Y. Aytac, and A. G. U. Perera, "High-performance, long-wave (~10.2 µm) InGaAs/GaAs quantum dot infrared photodetector with quaternary In0.21Al0.21Ga0.58As capping", Applied Physics Letters, vol. 99, no. 18, 2011.
  28. E. McCarthy, R. T. Rajendra Kumar, B. Doggett, S. Chakrabarti, R. J. O’haire, S. B. Newcomb, J. -P. Mosnier, M. O. Henry and E. McGlynn, "Effect of the crystallite mosaic spread on integrated peak intensities in 2?-? measurements of highly crystallographically textured ZnO thin films", Journal of Physics D: Applied Physics, vol. 44, pp. 375401, 2011.
  29. S. Sengupta, N. Halder, and S. Chakrabarti, "Effect of post-growth rapid thermal annealing on bilayer InAs/GaAs quantum dot heterostructure grown with very thin spacer thickness", Materials Research Bulletin, vol. 45, no. 11, pp. 1593-1597, Nov. 2010.
  30. S. Sengupta, N. Halder and S. Chakrabarti, "Effect of post-growth rapid thermal annealing on bilayer InAs/GaAs quantum dot heterostructure grown with very thin spacer thickness", Materials Research Bulletin, vol. 45, no. 11, pp. 1593-1597, Nov. 2010.
  31. S. Adhikary,K. ghosh, s. Chowdhury, N. Halder, and S. Chakrabarti, "An approach to suppress the blueshift of photoluminescence peaks in coupled multilayer InAs/GaAs quantum dots by high temperature post growth annealing", Materials Research Bulletin, vol. 45, no. 10, pp. 1466-1469, Oct. 2010.
  32. S. Adhikary,K. ghosh, s. Chowdhury, N. Halder and S. Chakrabarti, "An approach to suppress the blueshift of photoluminescence peaks in coupled multilayer InAs/GaAs quantum dots by high temperature post growth annealing", Materials Research Bulletin, vol. 45, no. 10, pp. 1466-1469, Oct. 2010.
  33. S. Sengupta, S. Shah, N. Halder, and S. Chakrabarti, "Comparison of single-layer and bilayer InAs/GaAs quantum dots with a higher InAs coverage", Opto-Electronics Review, vol. 18, no. 3, pp. 295-299, Sep. 2010.
  34. S. Sengupta, S. Shah, N. Halder and S. Chakrabarti, "Comparison of single-layer and bilayer InAs/GaAs quantum dots with a higher InAs coverage", Opto-Electronics Review, vol. 18, no. 3, pp. 295-299, Sep. 2010.
  35. S. Chowdhury, S. Adhikary, N. Halder, and S. Chakrabarti , "A Novel Approach to increase emission wavelength of InAs/GaAs quantum dots by using a quaternary capping layer", Opto-Electronics Review, vol. 18, no. 3, pp. 246-249, Sep. 2010.
  36. S. Chowdhury, S. Adhikary, N. Halder and S. Chakrabarti , "A Novel Approach to increase emission wavelength of InAs/GaAs quantum dots by using a quaternary capping layer", Opto-Electronics Review, vol. 18, no. 3, pp. 246-249, Sep. 2010.
  37. T. Patil, P. Mahajan and S. Chakrabarti, "Effect of progressive annealing on Silicon Nanostructures grown by Hot Wire Chemical Vapor Deposition", Superlattices and Microstructures, vol. 48, no. 2, pp. 190-197, Aug. 2010.
  38. N.Halder, Suseendran. J, S. Chakrabarti, M. Herrera, M. Bonds and N. Browning, "Effect of InAlGaAs and GaAs combination barrier thickness on the duration of dot formation in different layers of stacked InAs/GaAs quantum dot heterostructure grown by MBE", Journal of Nanoscience and Nanotechnology, vol. 10, no. 8, pp. 5202-5206(5), Aug. 2010.
  39. Srujan M, K Ghosh, S. Sengupta, and S. Chakrabarti, "Presentation and experimental validation of a model for the effect of thermal annealing on the photoluminescence of self-assembled InAs/GaAs quantum dots", ournal of Applied Physics, vol. 107, pp. 123107, Jun. 2010.
  40. Srujan M, K Ghosh, S. Sengupta and S. Chakrabarti, "Presentation and experimental validation of a model for the effect of thermal annealing on the photoluminescence of self-assembled InAs/GaAs quantum dots", Journal of Applied Physics, vol. 107, pp. 123107, Jun. 2010.
  41. S. Nagar and S. Chakrabarti, "Evidence of p-doping in ZnO films deposited on GaAs", Thin Solid Films, vol. 518, no. 16, pp. 4542-4545, Jun. 2010.
  42. S. Banerjee, N. Halder, and S. Chakrabarti, "Stranski-Krastanow growth of multilayer In(Ga)As/GaAs QDs on Germanium substrate", Applied Physics A: Material Science and Processing, vol. 99, no. 4, pp. 791-795, Jun. 2010.
  43. S. Adhikary, N. Halder, and S. Chakrabarti, "Investigation of strain in self assembled multilayer InAs/GaAs Quantum Dot heterostructures", Journal of Crystal Growth, vol. 312, no. 5, pp. 724-729, Feb. 2010.
  44. S. Adhikary, N. Halder and S. Chakrabarti, "Investigation of strain in self assembled multilayer InAs/GaAs Quantum Dot heterostructures", Journal of Crystal Growth, vol. 312, no. 5, pp. 724-729 , Feb. 2010.
  45. R. Sreekumar, A. Mandal, and S. Chakrabarti, "Effect of heavy ion implantation on self assembled single layer InAs/GaAs quantum dots", Journal of Physics D: Applied Physics, vol. 43, pp. 505302, 2010.
  46. R. Sreekumar, A. Mandal and S. Chakrabarti, "Effect of heavy ion implantation on self assembled single layer InAs/GaAs quantum dots", Journal of Physics D: Applied Physics, vol. 43, pp. 505302, 2010.
  47. Suseendran J, N. Halder, and S. Chakrabarti, "Stacking of multilayer InAs quantum dots with combination capping of InAlGaAs and high temperature grown GaAs", Superlattices and Microstructures, vol. 46, no. 6, pp. 900-906, Dec. 2009.
  48. S. Sengupta, N. Halder, and S. Chakrabarti, "Investigation of effect of varying growth pauses on the structural and optical properties of InAs/GaAs quantum dots heterostructure", Superlattices and Microstructures, vol. 46, no. 4, pp. 611-617, Oct. 2009.
  49. S. Sengupta, N. Halder and S. Chakrabarti, "Investigation of effect of varying growth pauses on the structural and optical properties of InAs/GaAs quantum dots heterostructure", Superlattices and Microstructures, vol. 46, no. 4, pp. 611-617, Oct. 2009.
  50. N. Halder, R. Rashmi, S. Chakrabarti, C. R. Stanley, M. Herrera and N. D. Browning, "A comprehensive study of the effect of in situ annealing at high growth temperature on the morphological and optical properties of self assembled InAs/GaAs QDs", Applied Physics A: Material Science and Processing, vol. 95, pp. 713-720, Apr. 2009.
  51. S. Chakrabarti, N. halder, S. Sengupta, J. Charthad, S. Ghosh, and C. R. Stanley, "Vertical Ordering and Electronic Coupling in Bilayer Nanoscale InAs/GaAs Quantum Dots Separated by a Thin Spacer Layer", Nanotechnology, vol. 19, pp. 505704, Dec. 2008.
  52. S. Chakrabarti, N. halder, S. Sengupta, J. Charthad, S. Ghosh and C. R. Stanley, "Vertical Ordering and Electronic Coupling in Bilayer Nanoscale InAs/GaAs Quantum Dots Separated by a Thin Spacer Layer", Nanotechnology, vol. 19, pp. 505704, Dec. 2008.
  53. S. Chakrabarti, N. Halder, S. Sengupta, J. Charthad, S. Ghosh, and C. R. Stanley , "A detailed PL investigation on the effect of barrier thickness and monolayer coverage on bilayer InAs/GaAs QDs grown at a reduced growth rate", Journal of Nanoelectronics and Optoelectronics, vol. 3, no. 3, pp. 277-280, Dec. 2008.
  54. S. Chakrabarti, N. Halder, S. Sengupta, J. Charthad, S. Ghosh and C. R. Stanley , "A detailed PL investigation on the effect of barrier thickness and monolayer coverage on bilayer InAs/GaAs QDs grown at a reduced growth rate", ”, Journal of Nanoelectronics and Optoelectronics, vol. 3, no. 3, pp. 277-280(4), Dec. 2008.
  55. N. Halder, S. Chakrabarti and C. R. Stanley, "Tunability of Photoluminescence of InAs/GaAs Quantum Dots By growth Pause Induced Ripening", Journal of Nanoscience and Nanotechnology, vol. 8, pp. 6232–6237, Dec. 2008.
  56. Z. K. Wu, H. Choi, X. H. Su, S. Chakrabarti, P. Bhattacharya and T. B. Norris, "Ultrafast Electronic Dynamics in Unipolar n-doped InGaAs/GaAs Self-Assembled Quantum Dots", IEEE Journal of Quantum Electronics, vol. 43, no. 6, pp. 486-496, Jun. 2007.
  57. S. Chakravarty, P. Bhattacharya, S. Chakrabarti, Y. Kang, and M. E. Meyerhoff, "Multimodal Lasing in Photonic Crystal Microcavities", Optics Letters, vol. 32, no. 10, pp. 1296-1298, 2007.
  58. S. Chakrabarti, B. Doggett, R O’Haire, E. McGlynn, M. O. Henry, A. Meaney and J. –P. Mosnier, "Characterization of Nitrogen-doped ZnO Thin Films grown by Plasma-Assisted Pulsed Laser Deposition on Sapphire Substrates", Superlattices and Microstructures, vol. 42, pp. 21-25, 2007.
  59. R. T. Rajendra Kumar, E. McGlynn, C. McLoughlin, S. Chakrabarti, M. Biswas, M. O. Henry, J. –P. Mosnier, K. Kumarappan and G. Hughes, "Control of ZnO Nanorod Array Density By Zn Supersaturation Variation and Effects on Field Emission", Nanotechnology, vol. 18, pp. 215704, 2007.
  60. G. Ariyawansa, A. G. U. Perera, X. H. Su, S. Chakrabarti and P. Bhattacharya, "Multi-color Tunneling quantum dot infrared photodetectors operating at room temperature", Infrared Physics and Technology, vol. 50, pp. 156-161, 2007.
  61. B. Doggett, S. Chakrabarti, R O’Haire, A. Meaney, E. McGlynn, M. O. Henry, and J. –P. Mosnier, "A Characterization of Phosphorus-doped ZnO Thin Films grown by Pulsed Laser Deposition", Superlattices and Microstructures, vol. 42, pp. 72-78, 2007.
  62. A. G. U. Perera, G. Ariyawansa, V. M. Apalkov, S. G. Mastik, X. H. Su, S. Chakrabarti, and P. Bhattacharya, "Wavelenght and Poarization Selective Multi-band Tunneling quantum dot infrared detectors", Opto-Electronics Review, vol. 15, no. 4, pp. 223-228, 2007.
  63. A. G. U. Perera, G. Ariyawansa, V. M. Apalkov, S. G. Mastik, X. H. Su, S. Chakrabarti and P. Bhattacharya, "Wavelength and Polarization Selective Multi-band Tunneling quantum dot infrared detectors", Opto-Electronics Review, vol. 15, no. 4, pp. 223-228, 2007.
  64. S. Chakrabarti, B. Doggett, R O’Haire, E. McGlynn, M. O. Henry, A. Meaney and J. –P. Mosnier, "P-type behavior above room temperature in Nitrogen-doped ZnO Thin film grown by plasma-assisted pulsed laser deposition", Electronics Letters, vol. 42, no. 20, pp. 1181-1182, Sep. 2006.
  65. M. Holub, J. Shin, S. Chakrabarti and P. Bhattacharya, "Spin-polarized Vertical-Cavity Surface-Emitting Laser: Epitaxial Growth Issues and Device Properties", Journal of Vacuum Science and Technology B, vol. 24, no. 3, pp. 1510-1513, May 2006.
  66. J. Topolancik, S. Chakravarty, S. Chakrabarti and P. Bhattacharya, "Electrically injected quantum dot photonic crystal microcavity light sources", Optics Letters , vol. 31, no. 2, pp. 232-234, Jan. 2006.
  67. X. Bai, T. Eckhause, S. Chakrabarti, P. Bhattacharya, R. Merlin and C. Kurdak, "Phonon detection Using Quasi-One Dimensional Quantum Wires", Physica E: Low Dimensional Systems & Nanostructures, vol. 34, pp. 592-595, 2006.
  68. L. A. Farina, X. Bai, C. Kurdak, S. Chakrabarti and P. Bhattacharya, "Study of Quantum Hall Edge States with a Single Electron Transistor Coupled to an Antidot", Physica E: Low Dimensional Systems & Nanostructures, vol. 34, pp. 187-190, 2006.
  69. S. Chakravarty, J. Topolancik, P. Bhattacharya, S. Chakrabarti, Y. Kang and M. E. Meyerhoff, "Ion Detection With Photonic Crystal Microcavities", Optics Letters, vol. 30, no. 19, pp. 2578-2580, Oct. 2005.
  70. M. Holub, J. Shin, S. Chakrabarti and P. Bhattacharya, "Electrically-injected spin-polarized vertical-cavity surface-emitting laser", Applied Physics Letters, vol. 87, no. 19, pp. 091108, Aug. 2005.
  71. X. H. Su, S. Chakrabarti, P. Bhattacharya, G. Ariyawansa and A. G. U. Perera, "A Resonant tunneling quantum Dot Infrared photodetector", IEEE Journal of Quantum Electronics, vol. 41, no. 7, pp. 974-979, Jul. 2005.
  72. S. Chakrabarti, A. D. Stiff-Roberts, X. H. Su, P. Bhattacharya, G. Ariyawansa and A. G. U. Perera, "High Performance Mid-Infrared Quantum Dot Infrared Photodetectors", Journal of Physics D: Applied Physics, Jul. 2005.
  73. P. Bhattacharya, X. H. Su, S. Chakrabarti, G. Ariyawansa and A. G. U. Perera, "Characteristics of a tunneling quantum dot infrared photodetector operating at room temperature", Applied Physics Letters, vol. 86, no. 19, pp. 191106 , May 2005.
  74. S. Chakrabarti, M. Holub, P. Bhattacharya, T. D. Mishima, M. B. Santos, M. B. Johnson and D. A. Blom, "Spin Polarized Light Emitting Diodes with Mn-doped InAs Quantum dots Nanomagnets as Spin Aligner", Nano Letters, vol. 5, no. 2, pp. 209-212, Feb. 2005.
  75. S. Chakrabarti, X. H. Su, P. Bhattacharya, G. Ariyawansa and A. G. U. Perera, "Characteristics of a multi-color InGaAs/GaAs quantum dot infrared photodetector", IEEE Photon. Technol. Lett, vol. 17, pp. 178-180, Jan. 2005.
  76. J. N. Gleason, M. E. Hjelmstad, V. D. Dasika, R. S. Goldman, S. Fathpour, S. Chakrabarti and P. Bhattacharya, "Nanometer-scale studies of point defect distributions in GaMnAs alloys", Applied Physics Letters, vol. 86, pp. 011911, Jan. 2005.
  77. S. Chakravarty, Y. Kang, J. Topolancik, P. Bhattacharya, M. E. Meyerhoff and S. Chakrabarti, "Photonic Crystal Microcavity source-based Chemical Sensor", Proc. SPIE , 2005.
  78. P. Bhattacharya, M. Holub, J. Shin and S. Chakrabarti, "Spin-polarized Semiconductor Light Sources", Proc. SPIE, pp. 31, 2005.
  79. D. Chen, T. E. Murphy, S. Chakrabarti and J. D. Phillips, "Optical Waveguiding In BaTiO3/MgO/AlxOy/GaAs Heterostructures", Applied Physics Letters, vol. 85, pp. 5206-5208, Nov. 2004.
  80. X. H. Su, S. Chakrabarti, A. D. Stiff-Roberts, J. Singh and P. Bhattacharya, "Novel Quantum Dot Photodetector Design Based on Double Barrier Resonant Tunneling", Electronics Letters, vol. 40, pp. 1082-1083, Aug. 2004.
  81. M. Holub, S. Chakrabarti, S. Fathpour, P. Bhattacharya, Y. Lei, and S. Ghosh, "Mn-doped InAs self-organized diluted magnetic quantum dot layers with Curie temperatures above 300K", Applied Physics Letters, vol. 85, pp. 973-975, Aug. 2004.
  82. S. Chakrabarti, A. D. Stiff-Roberts, P. Bhattacharya, and S. Kennerly, "Heterostructures for Achieving Very Large Responsivity in InAs/GaAs Quantum Dot Infrared Photodetectors", Virtual Journal of Nanoscience and Technology, vol. 9, no. 24, Jun. 2004.
  83. S. Fathpour, M. Holub, S. Chakrabarti and P. Bhattacharya, "Spin-polarized quantum dot light emitting diodes with high polarization efficiency at high temperatures", Electronics Letters, vol. 40, no. 4, pp. 694-695, May 2004.
  84. S. Chakrabarti, A. D. Stiff-Roberts, P. Bhattacharya, S. Gunapala, S. Bandara, S.B. Rafol and S. W. Kennerly, "High temperature operation of InAs/GaAs quantum dot infrared photodetector with large responsivity and detectivity", IEEE Photonics Technology Letters , vol. 16, no. 5, pp. 1361-1363, May 2004.
  85. S. Chakrabarti, S. Fathpour, K. Moazzami, J. Phillips, N. Browning and P. Bhattacharya, "Pulsed laser annealing of self-organized InAs/GaAs quantum dots", Journal of Electronic Materials(letters), vol. 33, no. 4, pp. L5- L8, Apr. 2004.
  86. A. D. Stiff-Roberts, X. H. Su, S. Chakrabarti and P. Bhattacharya, "Contribution of field-assisted tunneling emission to dark current in InAs/GaAs quantum dot infrared photodetectors", IEEE Photonics Technology Letters, vol. 16, no. 3, pp. 867-869, Mar. 2004.
  87. S. Chakrabarti, A. D. Stiff-Roberts, P. Bhattacharya and S. W. Kennerly, "High responsivity AlAs/InAs/GaAs superlattice quantum dot infrared photodetector", Electronics Letters, vol. 40, no. 3, pp. 197-198, Feb. 2004.
  88. P. Bhattacharya, S. Fathpour, S. Chakrabarti, M. Holub and S. Ghosh, "Application of Dilute Magnetic Semiconductors and Quantum Dots to Spin Polarized Light Sources", Mater. Res. Soc. Symp. Proc, vol. 794, pp. T8.1.1-T8.1.11 , 2004.
  89. S. Chakrabarti, P. Bhattacharya, A. D. Stiff-Roberts, Y. Y. Lin, J. Singh, Y. Lei, and N. Browning, "Intersubband absorption in annealed InAs/GaAs quantum dots: a case for polarization-sensitive infrared detection", Journal of Physics D: Applied Physics, vol. 36, pp. 1794-1797, Jul. 2003.
  90. B. Kochman, A. D. Stiff-Roberts, S. Chakrabarti, J. D. Phillips, S. Krishna, J. Singh, and P. Bhattacharya, "Absorption, carrier lifetime, and gain in InAs/GaAs quantum dot infrared photodetectors", IEEE Journal of Quantum Electronics, vol. 39, pp. 459-467, Mar. 2003.
  91. A. D. Stiff-Roberts, S. Chakrabarti, S. Pradhan, B. Kochman, P. Bhattacharya, "Raster-scan imaging with normal-incidence, mid-infrared InAs/GaAs quantum dot infrared photodetectors", Applied Physics Letters, vol. 80, pp. 3265-3267, May 2002.
  92. S. Dhar and S. Chakrabarti, "Large photoresponse of CdO/Porous Si diodes", Semicond. Sci. Technol, vol. 15, pp. L.39-L40, Nov. 2000.
  93. S. Chattopadhyay, L. K. Bera, K. Maharatna, S. Chakrabarti, S. Dhar, S. K. Ray and C. K. Maiti, "Schottky diode characteristics of Ti on strained-Si", Solid State Electronics, vol. 41, pp. 1891-1893, Dec. 1997.
  94. S. Dhar and S. Chakrabarti, "Properties of chemically deposited Cu2S films on porous silicon", J. Appl. Phys, vol. 82, pp. 655-657, Jul. 1997.
  95. S. Chakrabarti and S. Dhar, "Temperature-dependent behavior of chalcogenide thin-film contacts on porous silicon", Solid State Phenomena, vol. 55, pp. 77-79, 1997.
  96. S. Dhar and S. Chakrabarti, "Electroless Ni plating on n- and p-type porous Si for ohmic and rectifying contacts", Semicond. Sci. Technol, vol. 11, pp. 1231-1234, Aug. 1996.
  97. S. Dhar and S. Chakrabarti, "Electroless Nickel Plated contacts on Porous silicon", Applied Physics Letters, vol. 68, pp. 1392-1394, Mar. 1996.
  98. P. Chattopadhyay, D. P. Haldar, S. Chakrabarti and M. Ray, "Effect of Deep-level Impurities on the Grain-Boundary Potential of a Polycrystalline Semiconductor", Phys Stat SolidiA-Applied Research, vol. 142, pp. 117-125, Mar. 1994.

Books
  1. S. Adhikary and S. Chakrabarti, "Quaternary Capped In(Ga)AsGaAs Quantum Dot Infrared Photodetectors: From Materials to Devices", Springer, 2017.[PDF] [DOI]

Conference Papers / Book Chapters
  1. Saranya R. Reddy Shriram, Raveesh Gourishetty, Arjun Mandal, Samishta Choudhary, Ajay Kumar, and Subhananda Chakrabarti, "A systematic post-growth thermal annealing step for receding size inhomogeneity inside multiple InAs/Inx(Ga)1-xAs sub-monolayer quantum-dot heterostructures" in Photonic and Phononic Properties of Engineered Nanostructures XII, SPIE, Mar. 2022. [DOI]
  2. Raveesh Gourishetty and Subhananda Chakrabarti , "Impact of GaAsN capping on strain and quantum confinement in vertically coupled InAs/GaAs quantum dots" in Low Dimensional Materials and Devices, International society for optics and photonics, pp.1180018, Aug. 2021. [DOI]
  3. Raveesh Gourishetty, Debi Prasad Panda, Sanowar Alam Gazi, Subhananda Chakrabarti, "Optical and structural investigation of multilayer InAs SK QDs with In0.15Ga0.85As strain-reducing layer electronically coupled to SML QDs grown by molecular beam epitaxy" in Quantum Optics and Photon Counting 2021, International Society for Optics and Photonics, 2021., Apr. 2021. [DOI]
  4. Raveesh Gourishetty, Saranya Reddy Shriram, Debi Prasad Panda, and Subhananda Chakrabarti, "Influence of Sb composition on the band alignment and optical characteristics of strain coupled vertically aligned InAs/GaAsSb quantum dots" in Quantum Optics and Photon Counting 2021, SPIE, Apr. 2021. [DOI]
  5. Raveesh Gourishetty, Debiprasad Panda, Ravinder Kumar, Sanowar Alam Gazi, Subhananda Chakrabarti, "A novel heterostructure with multilayer Stranski-Krastanov QDs heterogeneously coupled to Submonolayer QDs for enhanced optical and material characteristics" in Low-Dimensional Materials and Devices 2020, Aug. 2020. [DOI]
  6. Ankitha E. Bangera, Kumar Appaiah, and Subhananda Chakrabarti, "Surface engineering using compounds of titanium nanocoatings for silicon-based optical devices" in SPIE Photonics West, SPIE, Mar. 2019. [DOI]
  7. H. S. Gupta, A. S. K. Kumar, M. Shojaei Baghini, S. Chakrabarti, S. Paul, S. Mehta, R. S. Chaurasia, A R Chowdhury, and D. K. Sharma, "Implementation of High Performance Read out Integrated Circuit" in IEEE MWSCAS, Aug. 2014.
  8. H. S. Gupta, A. S. K. Kumar, M. Shojaei Baghini, S. Chakrabarti, S. Paul, S. Mehta, R. S. Chaurasia, A R Chowdhury, and D. K. Sharma, "Efficient Implementation of High Performance Read out Integrated Circuit" in IEEE EDSSC, Jun. 2014.
  9. S. Shah, S.Maity, S. Shetty and S. chakrabarti, "Optimizing the Multilayer InAs/GaAs Quantum Dot Heterostructure to Produce Bilayer like Uniformity by Using Annealing and Variable Spacer Thicknesses for Long Wavelength (1.3um or 1.55 um) Applications" in Materials Research Society Meeting, Boston, USA, Nov. 2012.
  10. S. Nagar and S. Chakrabarti, "Dependence of Oxygen Pressure on the Structural, Electrical and Optical Properties of Pulsed Laser Deposited ZnO Thin Films" in Materials Research Society Meeting, Boston, USA, Nov. 2012.
  11. S.Shah,S.Maity, S.Shetty and S. Chakrabarti, "Extension of the bilayer into multilayer InAs/GaAsQuantum dot heterostructurefor application in long wavelength (1.3um) devices and the use of annealing to increase homogeneity" in North American Molecular Beam Epitaxy Conference, Georgia, Atlanta, USA, Oct. 2012.
  12. Sourav Adhikary and Subhananda Chakrabarti, "Evidence of long wave excited state transition at high temperature (200K) in 35 layer In0.50Ga0.5As/GaAs quantum dot infrared photodetector" in North American Molecular Beam Epitaxy Conference, Georgia, Atlanta, USA, Oct. 2012.
  13. Sourav Adhikary, A. G. U. Perera, Yigit Aytac, and Subhananda Chakrabarti , "Demonstration of very large responsivity (~25 A/W) of quaternary capped InAs/GaAs quantum dot infrared photodetector under 45-degree angle incidence measurement" in North American Molecular Beam Epitaxy Conference, Georgia, Atlanta, USA, Oct. 2012.
  14. Sourav Adhikary, A. G. U. Perera, Yigit Aytac and Subhananda Chakrabarti, "Demonstration of very large responsivity (~25 A/W) of quaternary capped InAs/GaAs quantum dot infrared photodetector under 45-degree angle incidence measurement" in North American Molecular Beam Epitaxy Conference, Georgia, Atlanta, USA, Oct. 2012.
  15. S. Sengupta, A. Mandala, K. L. Mathurb, and S.Chakrabartia , "A comprehensive study on MBE grown InAs sub-monolayer quantum dots with different capping combination" in North American Molecular Beam Epitaxy Conference, Georgia, Atlanta, USA, Oct. 2012.
  16. S. Sengupta, A. Mandala, K. L. Mathurb and S.Chakrabarti, "A comprehensive study on MBE grown InAs sub-monolayer quantum dots with different capping combination" in North American Molecular Beam Epitaxy Conference, Georgia, Atlanta, USA, Oct. 2012.
  17. Sourav Adhikary and Subhananda Chakrabarti, "Spectral broadening due to post growth annealing on long wave InGaAs/GaAs quantum dot infared photodetector with quaternary barrier layer" in Electronics Materials Conference 2012, Penn State, USA, Jun. 2012.
  18. A.Mandal, R.Sreekumar, S.K.Gupta, S.Chakrabarti, "10-Fold Enhancement in Photoluminescence Efficiency Due to Low Energy H- Ion Irradiation over InAs/GaAs Quantum Dots" in MRS Spring Meeting, San Francisco, USA, Apr. 2012.
  19. A.Mandal, U.Verma, N.Halder, S.Chakrabarti, "The impact of growth rate and barrier thickness on the thermal stability of photoluminescence for coupled InAs/GaAs quantum dot heterostructures with quaternary(InAlGaAs) capping" in SPIE PHOTONIC WEST,San Francisco, California United States, Jan. 2012.
  20. subho, "Optical and Structural Investigation of MBE grown In(Ga)As/GaAs Quantum Dot Detector Structure on Germanium Substrate" in 38th International Symposium on Compound Semiconductors,Berlin, Germany, May 2011.
  21. A. Mandal, S. Chakrabarti, and S. K. Gupta, "Photoluminescence and Hall study for the production and recovery of defects in phosphorus implanted ZnO films" in SPIE Photonic West, San Francisco, USA, Jan. 2011.
  22. S. Banerjee, N. Halder, and S. Chakrabarti, "Molecular beam epitaxial growth of GaAs/AlGaAs multi quantum well on germanium substrate" in SPIE Photonic West, San Francisco, USA, Jan. 2011.
  23. S. Nagar, S. Chakrabarti, and S. K. Gupta, "Influence of Li implantation on the optical and electrical properties of ZnO film" in SPIE Photonic West, San Francisco, USA, Jan. 2011.
  24. S. Nagar, S. Chakrabarti and S. K. Gupta, "Influence of Li implantation on the optical and electrical properties of ZnO film" in SPIE Photonic West, San Francisco, USA, Jan. 2011.
  25. S. Messala, K. Ghosh, S. Sengupta and S. Chakrabarti, "Theoretical Model on Thermal Annealing of Self-assembled InAs/GaAs Quantum Dots and Its Experimental Validation" in Materials Research Society Meeting, Boston, USA, Dec. 2010.
  26. S. Shah, S. Sengupta and S. Chakrabarti, "Room-temperature Long-wavelength (~1.45?m) Emission from Self-assembled InAs/GaAs Quantum Dots" in Materials Research Society Meeting, Boston, USA, Dec. 2010.
  27. S. Messala, K. Ghosh, S. Sengupta, and S. Chakrabarti, "Theoretical Model on Thermal Annealing of Self-assembled InAs/GaAs Quantum Dots and Its Experimental Validation" in Materials Research Society Meeting, Boston, USA, Nov. 2010.
  28. S. Messala, K. Ghosh, S. Sengupta and S. Chakrabarti, "Theoretical Model on Thermal Annealing of Self-assembled InAs/GaAs Quantum Dots and Its Experimental Validation" in Materials Research Society Meeting, Boston, USA, Nov. 2010.
  29. S. Shah, S. Sengupta, and S. Chakrabarti, "Room-temperature Long-wavelength (~1.45?m) Emission from Self-assembled InAs/GaAs Quantum Dots" in Materials Research Society Meeting, Boston, USA, Nov. 2010.
  30. S. Shah, S. Sengupta and S. Chakrabarti, "Room-temperature Long-wavelength (~1.45?m) Emission from Self-assembled InAs/GaAs Quantum Dots" in Materials Research Society Meeting, Boston, USA, Nov. 2010.
  31. R. Sreekumar, S. Chakrabarti and S.K. Gupta, "Effect of Low Energy Proton Irradiation on Single Layer InAs/GaAs Quantum Dot Heterostructure" in Materials Research Society Meeting, Boston, USA, Nov. 2010.
  32. N. Halder, S. Adhikary, and S.Chakrabarti, "Thermal Stability in Emission Peak in Multilayer InAs/GaAs Quantum Dot Heterostructure in Laser Application" in Electronic Materials conference 2010, Notre Dame, USA, Jun. 2010.
  33. N. Halder, S. Adhikary and S.Chakrabarti, "Thermal Stability in Emission Peak in Multilayer InAs/GaAs Quantum Dot Heterostructure in Laser Application" in Electronic Materials conference 2010, Notre Dame, USA, Jun. 2010.
  34. Srujan M, K. Ghosh, S. Chakrabarti, and S. Sengupta, "Theoretical modelling on thermal annealing of self-assembled InAs/GaAs quantum dots and its experimental validation" in European Material Research society (EMRS) Meeting 2010, Congress Center, Strasbourg, France, Jun. 2010.
  35. Srujan M, K. Ghosh, S. Chakrabarti and S. Sengupta, "Theoretical modelling on thermal annealing of self-assembled InAs/GaAs quantum dots and its experimental validation" in European Material Research society (EMRS) Meeting 2010, Congress Center, Strasbourg, France, Jun. 2010.
  36. S. Banerjee, N. Halder and S. Chakrabarti, "Self Assembled Growth of Nanostructures on Germanium Substrate by Molecular Beam Epitaxy" in European Material Research society (EMRS) Meeting 2010, Congress Center, Strasbourg, France, Jun. 2010.
  37. R. Sreekumar, S. Sengupta, S. Chakrabarti, and and S. K. Gupta, "Investigation of degradation of photoluminescence efficiency in InAs/GaAs quantum dots on heavy ion bombardment" in European Material Research society (EMRS) Meeting 2010, Congress Center, Strasbourg, France, Jun. 2010.
  38. R. Sreekumar, S. Sengupta, S. Chakrabarti, and S. K. Gupta, "Investigation of degradation of photoluminescence efficiency in InAs/GaAs quantum dots on heavy ion bombardment" in European Material Research society (EMRS) Meeting 2010, Congress Center, Strasbourg, France, Jun. 2010.
  39. A. Mandal, S. Kala, and S. Chakrabarti, "High Hall mobility in Antimony-doped p-type ZnO film" in European Material Research society (EMRS) Meeting 2010, Congress Center, Strasbourg, France, Jun. 2010.
  40. A. Mandal, S. Kala and S. Chakrabarti, "High Hall mobility in Antimony-doped p-type ZnO film" in European Material Research society (EMRS) Meeting 2010, Congress Center, Strasbourg, France, Jun. 2010.
  41. R. Sreekumar, S.Sengupta, S. Chakrabarti, and S. K. Gupta, "Enhancement of Luminescence Efficiency in InAs/GaAs Quantum Dots by Proton Irradiation" in Electronic Materials conference 2010, Notre Dame, USA, Jun. 2010.
  42. R. Sreekumar, S.Sengupta, S. Chakrabarti, S. K. Gupta, "Enhancement of Luminescence Efficiency in InAs/GaAs Quantum Dots by Proton Irradiation" in Electronic Materials conference 2010, Notre Dame, USA, Jun. 2010.
  43. A. Mandal and S. Chakrabarti, "Structural and electrical properties of rectifying p-ZnO/n+-InP heterojunction" in SPIE Photonics West in San Francisco, California, USA, Jan. 2010.
  44. S. Sengupta, N. Halder and S. Chakrabarti, "Strain Induced Stoppage of the Emission Peak Blueshift of Annealed Bilayer Quantum Dot Structures Separated by Thin Spacer" in MRS Fall Meeting 2009, Boston, USA, Dec. 2009.
  45. S. Sengupta, N. Halder, and S. Chakrabarti, "Strain Induced Stoppage of the Emission Peak Blueshift of Annealed Bilayer Quantum Dot Structures Separated by Thin Spacer" in MRS Fall Meeting 2009, Boston, USA, Nov. 2009.
  46. A. Mandal and S. Chakrabarti, "Realization of Stable p-type Behavior of ZnO Thin Films Deposited on InP" in MRS Fall Meeting 2009, Boston, USA, Nov. 2009.
  47. S. Chowdhury, S. Adhikary and S. Chakrabarti, "Increasing the size of InAs/GaAs multilayer coupled quantum dots with low defect density by using a InAlGaAs quarternary capping layer" in European Material Research society (EMRS)Fall Meeting 2009, Warsaw Institute of Technology, Warsaw,Poland, Sep. 2009.
  48. A. Mandal and S. Chakrabarti, "High P-type conductivity in Phosphorus-doped ZnO film" in European Material Research society (EMRS)Fall Meeting 2009, Warsaw Institute of Technology, Warsaw, Poland, Sep. 2009.
  49. S. Sengupta and S. Chakrabarti, "A Comparative study of single layer and bi-layer InAs/GaAs quantum dots (QDs) with higher InAs monolayer coverage" in European Material Research society (EMRS)Fall Meeting 2009, Warsaw Institute of Technology, Warsaw, Poland, Sep. 2009.
  50. Suseendran J, N. Halder and S. Chakrabarti, "Strain -induced modifications of dot formation time of InAs quantum dot heterostructure grown by molecular beam epitaxy" in 17th American Conference on Crystal Growth and Epitaxy, Lake Geneva, Wisconsin, USA, Aug. 2009.
  51. S. Adhikary and S. Chakrabarti, "Ivestigation of structural and optical properties of coupled multilayer InAs/GaAs quantum dots with combinational In0.21Al0.21Ga0.58As/ GaAs capping" in European Material Research society (EMRS) Meeting 2009, Congress Center, Strasbourg, France, Jun. 2009.
  52. S. Nagar and S. Chakrabarti, "Evidence of p-doping in ZnO films deposited on GaAs" in European Material Research society (EMRS) Meeting 2009, Congress Center, Strasbourg, France, Jun. 2009.
  53. Suseendran J, N. Halder and S. Chakrabarti , "Effect of InAlGaAs and GaAs combination barrier thickness on the stacking of coupled InAs/GaAs quantum dot layers grown by MBE" in European Material Research society (EMRS) Meeting 2009, Congress Center, Strasbourg, France, Jun. 2009.
  54. P.Mahajan, T. Patil and S. Chakrabarti, "HWCVD-grown Silicon Nanocrystals : A Study of the Effect of Annealing on Structures Evolved with Varying Growth Rates" in MRS Spring Meeting 2009, San Francisco, USA, Apr. 2009.
  55. Suseendran J, N.Halder, S. Sengupta, S. Chakrabarti and T. D. Mishima, "Optimized Stacking of Nanoscale InAs/GaAs Quantum Dots in Multilayer Heterostructures" in 2nd International conference on Frontiers in Nanoscience and Technology (Cochin Nano 2009), Cochin, Jan. 2009.
  56. S. Sengupta, N. Halder, S. Chakrabarti, M. Herrera, and N. G. Browinng, "Investigation of the effect of varying dot ripening time on the structural and optical properties of Nanoscale InAs/GaAs Quantum Dots layer" in 2nd International conference on Frontiers in Nanoscience and Technology (Cochin Nano 2009), Cochin, India, Jan. 2009.
  57. S. Sengupta, N. Halder, S. Chakrabarti, M. Herrera and N. G. Browinng, "Investigation of the effect of varying dot ripening time on the structural and optical properties of Nanoscale InAs/GaAs Quantum Dots layer" in 2nd International conference on Frontiers in Nanoscience and Technology (Cochin Nano 2009), Cochin, Jan. 2009.
  58. N. Halder, J. Charthad and S. Chakrabarti, "TEM and PL Characterization of InAs-GaAs Bi-layer QDs" in PHOTONICS 2008: The International Conference on Fiber Optics and Photonics, New Delhi, India, Dec. 2008.
  59. Prashanthi K, S. Chakrabarti and V. R. Palkar, "Integration of novel multiferroic thin films on GaN/Sapphire and GaAs substrates for high frequency device applications" in 53rd Magnetism and Magnetic Materials Conference,Austin Texas, USA, Nov. 2008.
  60. Prashanthi K, S.P.Duttagupta, S. Chakrabarti and V. R. Palkar, "C-V characteristics of multiferroic Bi0.7Dy0.3FeO3 thin films directly integrated on <100>Silicon" in 53rd Magnetism and Magnetic Materials Conference, Austin Texas, USA, Nov. 2008.
  61. J. Charthad, N.Halder, S. Chakrabarti, Miriam Herrera, Nigel D. Browning and C.R. Stanley, "A Detailed Investigation of the Effect of Ripening Pause on the Structural and Optical Characteristics of InAs/GaAs Quantum Dot" in 2008 Asian Conference on Nanoscience and Nanotechnology(AsiaNANO2008),Biopolis, Singapore, Nov. 2008.
  62. S. Chakrabarti, N. Halder, J. Charthad, S. Ghosh and C. R. STanley, "Effect of Monolayer Coverage and Spacer Thickness on InAs/GaAs Bi-layer QDs grown at a reduced growth rate" in ISCS2008, 35th International Symposium on Compound Semiconductors, Europa-Park, Rust, Germany, Sep. 2008.
  63. S. Chakrabarti, N. Halder and C. R. Stanley, "Optical and Structural Characterization of Coupled Multi-layer InAs/GaAs Quantum Dot Heterostructures Grown by Molecular Beam Epitaxy" in IUMRS-ICEM 2008,International Conference on Electronic Materials, Hilton Sydney, Sydney, Australia, Aug. 2008.
  64. N. Halder and S. Chakrabarti, "Tunability of Photoluminescence of InAs/GaAs Quantum Dots by a Combination of Dot Pause and In0.21Al0.21Ga0.58As Quarternary Capping" in Third international Conference on Luminescence and its Applications (ICLA 2008), National Physical Laboratory, New Delhi, Feb. 2008.
  65. S. Chakrabarti, "Molecular Beam Epitaxial Growth of InAs/GaAs quantum Dot Heterostructures for Intermediate Band Solar Cells" in International conference on solar Cells (IC SOLACE 2008), Jan. 2008.
  66. N. Halder and S. Chakrabarti, "Effect of Ripening pause on the Optical and Structural characteristics of InAs/GaAs Quantum Dots" in International Conference on Emerging Technologies and applications in Engineering, Technology and Sciences,Rajkot, Gujrat, Jan. 2008.
  67. Z. K. Wu, H. Choi, T. B. Norris, X. H. Su, S. Chakrabarti and P. Bhattacharya, "Investigation of spin-induced Pauli blocking on electron dynamics in n-type In0.4Ga0.6As/GaAs quantum dots" in Conference on Lasers and Electro-Optics, Dec. 2007.
  68. S. Chakrabarti, "A High Temperature Two-Color In(Ga)As/GaAs Quantum Dot-based infrared Photodetector" in International Conference on Sensors and Related Networks, Dec. 2007.
  69. S. Chakrabarti and C. Stanley, "III-V growth on Ge" in UK MBE-user Meeting, University of Manchester, Manchester, Apr. 2007.
  70. Z. K. Wu, H. Choi, T. B. Norris, S. Chakrabarti, X. H. Su and P. Bhattacharya, "Electron Dynamics in n-doped In0.4Ga0.6As/GaAs Quantum Dot Infrared Detector Structures" in Conference on Lasers and Electro-Optics, Dec. 2006.
  71. J. P. Mosnier, S. Chakrabarti and B. Doggett, "Material Properties of Nitrogen- and Phosphorus-doped ZnO Thin Films Grown by Plasma-assisted Pulsed Laser Deposition on Sapphire Substrates" in 4th International workshop on ZnO and Related Materials, Germany, Oct. 2006.
  72. G. Ariyawansa, A. G. U. Perera, X. H. Su, S. Chakrabarti and P. Bhattacharya, "Multi-color Tunneling quantum dot infrared photodetectors operating at room temperature" in International Workshop on Quantum Well Infrared Photodetectors, Kandy, Sri Lanka, Jun. 2006.
  73. S. Chakrabarti, B. Doggett, M. Novotny, R. O’Haire, E. McGlynn, M. O. Henry, A. Meaney, and J. P. Mosnier, "Material Properties of Nitrogen-doped ZnO Thin Films Grown by Plasma-assisted Pulsed Laser Deposition on Sapphire Substrates" in European Material Research Society 2006, Nice, France, May 2006.
  74. R. O’Haire, A. Meaney, B. Doggett, S. Chakrabarti, E. McGlynn, M. O. Henry and J. P. Mosnier, "Growth and Characterization of ZnO Nanostructures Grown on Bare and Patterned Sapphire Substrates Using Pulsed Laser Deposition" in European Material Research Society 2006, Nice, France, May 2006.
  75. B. Doggett, S. Chakrabarti, R. O’Haire, E. McGlynn, M. O. Henry and J. P. Mosnier, "A Study of the Material Properties of Phosphorus-doped ZnO Thin Films" in European Material Research Society 2006, Nice, France, May 2006.
  76. S. Chakravarty, Y. Kang, J. Topolancik, P. Bhattacharya, M. E. Meyerhoff and S. Chakrabarti, "Photonic Crystal Microcavity source-based Ion Sensor" in IEEE Sensors, Irvine, CA, Oct. 2005.
  77. S. Chakravarty, Y. Kang, J. Topolancik, P. Bhattacharya, M. E. Meyerhoff, and S. Chakrabarti, "Photonic Crystal Microcavity source-based Chemical Sensor" in Optics East, Boston, MA, Oct. 2005.
  78. M. Holub, J. Shin, S. Chakrabarti and P. Bhattacharya, "Spin-VCSEL: Epitaxial Growth Issues and Device Properties" in North American Molecular Beam Epitaxy Conference, Santa Barbara, CA, Sep. 2005.
  79. P. Bhattacharya, S. Chakrabarti, X. H. Su and A. D. Stiff-Roberts , "Quantum Dot Infrared Photodetectors" in II-VI Workshop, Boston, MA, Sep. 2005.
  80. X. H. Su, S. Chakrabarti, P. Bhattacharya, G. Ariyawansa and A. G. U. Perera, "A Tunnel Quantum Dot Infrared Photodetectors" in 8th International Conference on Intersubband Transition in Quantum Wells, Boston, MA, Sep. 2005.
  81. L. A. Farina, X. Bai, C. Kurdak, S. Chakrabarti and P. Bhattacharya, "Study of Quantum Hall Edge States with a Single Electron Transistor Coupled to an Antidot" in Electronic Properties of Two-Dimensional systems(EP2DS), Albuquerque, NM, Jul. 2005.
  82. X. Bai, T. Eckhause, S. Chakrabarti, P. Bhattacharya, R. Merlin, and C. Kurdak, "Phonon detection Using Quasi-One Dimensional Quantum Wires" in Electronic Properties of Two-Dimensional systems (EP2DS), Albuquerque, NM, Jul. 2005.
  83. X. Bai, T. Eckhause, S. Chakrabarti, P. Bhattacharya, R. Merlin and C. Kurdak, "Phonon detection Using Quasi-One Dimensional Quantum Wires" in Electronic Properties of Two-Dimensional systems(EP2DS), Albuquerque, Jul. 2005.
  84. M. Holub, J. Shin, S. Chakrabarti and P. Bhattacharya, "Electrically-injected spin-polarized quantum well vertical-cavity surface-emitting laser" in Device Research Conference, University of California-Santa Barbara, Santa Barbara, CA, Jun. 2005.
  85. S. Chakravarty, J. Topolancik, S. Chakrabarti and P. Bhattacharya, "Electrically Injected Quantum Dot Bottom-emitting Photonic Crystal Single Mode Microcavity Light Source" in Device Research Conference, University of California-Santa Barbara, Santa Barbara, CA, Jun. 2005.
  86. M. Holub, J. Shin, S. Chakrabarti and P. Bhattacharya, "Spin Injection and Polarization Switching in a Vertical-Cavity Surface-Emitting Laser: A Spin VCSEL" in Conference on Lasers and Electro-Optics, Baltimore, MD, May 2005.
  87. S. Chakrabarti, X. H. Su, G. Ariyawansa, A. G. U. Perera and P. Bhattacharya, "Room Temperature Operation of Resonant Tunneling Quantum Dot Infrared Detectors" in Conference on Lasers and Electro-Optics, Baltimore, MD, May 2005.
  88. P. Bhattacharya, M. Holub, J. Shin and S. Chakrabarti, "Spin-polarized Semiconductor Light Sources" in Photonics West 2005, San Jose, CA, Jan. 2005.
  89. P. Bhattacharya, M. Holub, J. Shin, S. Chakrabarti, A. R. Kovsh, S. S. Mikhrin, I. L. Kresnikov, A. V. Kozhukov, and N. N. Ledentsov, "High Performance Quantum Dot Lasers" in US-Korea Conference, Research Triangle Park, NC, Aug. 2004.
  90. J.N. Gleason, M.E. Hjelmstad, V.D. Dasika, S. Fathpour, S. Chakrabarti, P.K. Bhattacharya nad, and R.S. Goldman, "Nanometer-Scale Studies of Point Defect Distributions in GaMnAs Films" in Gordon Research Conference on Defects in Semiconductors, Colby-Sawyer College, New London, NH, Jul. 2004.
  91. X. H. Su, A. D. Stiff-Roberts, S. Chakrabarti, J. Singh and P. Bhattacharya, "Resonant Tunneling Quantum Dot Infrared Photodetector (RT-QDIP): Separating Dark Current and Photocurrent" in Device Research conference, Notre Dame University, Notre Dame, IN, Jun. 2004.
  92. J.N. Gleason, M.E. Hjelmstad, V.D. Dasika, S. Fathpour, S. Chakrabarti, P.K. Bhattacharya, and R.S. Goldman, "Nanometer-Scale Studies of Point Defect Distributions in GaMnAs Films" in Electronics Materials Conference, Notre Dame University, Notre Dame, IN, Jun. 2004.
  93. M. Holub, S. Chakrabarti, S. Fathpour, P. Bhattacharya, Y. Lei, T. D. Mishima, M. B. Santos, M. B. Johnson and D. A. Blom, "Mn-doped InAs self-organized quantum dos with Curie temperature above 300K" in Electronics Materials Conference, Notre Dame University, Notre Dame, IN, Jun. 2004.
  94. M. Holub, S. Fathpour, S. Chakrabarti, J. Topol’ancik, P. Bhattacharya and Y. Lei, "High-temperature spin-polarized quantum dot light-emitting diodes" in Device Research Conference, Notre Dame University, Notre Dame, IN, Jun. 2004.
  95. S. Fathpour, Z. Mi, S. Chakrabarti, P. Bhattacharya, A. R. Kovsh, S. S. Mikhrin, I. L. Krestnoikov, A. V. Kozhukov and N. N. Ledenstov, "Characteristics of High-Performance 1um and 1.3um Quantum Dot Lasers: Impact of p-doping and Tunnel Injection" in Device Research Conference, Notre Dame University, Notre Dame, IN, Jun. 2004.
  96. J. N. Gleason, M. E. Hjelmstad, V. D. Dasika, , S. Fathpour, S. Chakrabarti, P. Bhattacharya and R. S. Goldman, "Cross Sectional Scanning Tunneling Microscopy Studies of Mn distribution in Ga1-xMxAs" in 31st Conference on the Physics and Chemistry of Semiconductor Interfaces, Kailua-Kona, HI, Jan. 2004.
  97. P. Bhattacharya, A. Stiff-Roberts, S. Chakrabarti, S. Krishna, C. Fischer, T. Norris and J. Uriyama, "Carrier Dynamics in self-organized In(Ga)As/Ga(Al)As quantum dots and their application long wavelength sources and detectors" in Compound semiconductors2002 Institute of Physics Conference, pp.117-124, Dec. 2003.
  98. P. Bhattacharya, S. Fathpour, S. Chakrabarti, M. Holub and S. Ghosh, "Application of Dilute Magnetic Semiconductors and Quantum Dots to Spin Polarized Light Sources" in Mater. Res. Soc. Symp. Proc., Boston , pp.794, Dec. 2003.
  99. A. D. Stiff-Roberts, S. Chakrabarti, P. Bhattacharya, and S. Kennerly, "Tailoring of Quantum Dot Infrared Photodetector Performance with AlAs/GaAs Superlattice Barriers" in Lasers and Electro-Optics Society Meeting, Tucson, AZ, Oct. 2003.
  100. S. Chakrabarti, A. D. Stiff-Roberts, P. Bhattacharya, and S. Kennerly, "Heterostructures for Achieving Very Large Responsivity in InAs/GaAs Quantum Dot Infrared Photodetectors" in North American Conference on Molecular Beam Epitaxy, Keystone, CO, Sep. 2003.
  101. S. Chakrabarti, K. Moazzami, S. Fathpour, P. Bhattacharya and J. Phillips, "Pulsed Laser Annealing of Self-Organized InAs/GaAs Quantum Dots" in Electronics Materials Conference, Salt Lake City, UT, Jun. 2003.
  102. A. D. Stiff-Roberts, S. Chakrabarti, S. Kennerly, and P. Bhattacharya, "High-responsivity, polarization-sensitive, 70-layer InAs/GaAs quantum dot infrared photodetector" in Conference on Lasers and Electro-Optics, Baltimore, Jun. 2003.
  103. P. Bhattacharya, A. Stiff-Roberts, S. Chakrabarti, S. Kennerly, and S. Krishna, (INVITED) , "Quantum Dot Inter-sublevel Transition-Based Devices" in Nano-Optoelectronics Workshop, Berlin, Germany, Jul. 2002.
  104. S. Chakrabarti and S. Dhar, "Current components in a Cu2S-PSi junctions" in 10th International Workshop on Physics of Semiconductor Devices, New Delhi, Dec. 1999.
  105. S. Chakrabarti and S. Dhar, "Photoresponse of CdO/Porous Si junction" in 1st International Conference on Computes and Devices for Communication, Calcutta, Dec. 1998.
  106. S. Chakrabarti and S. Dhar, "Temperature dependent behavior of chalcogenide thin-film contacts on porous silicon" in International Conference on Fiber Optics and Photonics – PHOTONICS’96, Madras, Dec. 1996.
  107. S. Chakrabarti and S. Dhar, "A Chalcogenide- Porous Si Photodiode" in 3rd International Conference on Semiconductor Material and Technology, New Delhi, Dec. 1996.
  108. S. Chakrabarti and S. Dhar, "Ohmic Contacts to Porous Silicon by electroless nickel plating" in 8th International Workshop on Physics of Semiconductor Devices, New Delhi, Dec. 1995.

Contributed Chapters To A Book
  1. P. Bhattacharya, A. D. Stiff-Roberts, X. H. Su, S. Chakrabarti and C. H. Fischer, "Intersubband Optoelectronic Devices", Edited by R. Paiella and O. Manasreh, Intersubband Transition in Quantum Dots, McGraw-Hill, New York .

Address

  • Department of Electrical Engineering
    IIT Bombay, Powai
    Mumbai 400 076, India

  • (O): +91-22-2576-7421
    (R): +91-22-2576-8421
  • subho@ee.iitb.ac.in
  • Visit Website
Subhananda Chakrabarti iit bombay
Subhananda Chakrabarti
Qualifications

• Ph.D Calcutta University
• M.Sc Calcutta University

Research Interests

• III-V Compound semiconductor materials growth and characterization
• Optoelectronic Devices of interest includes quantum dot photodetectors and Solar cells
• III-V device integration on germanium

Work Experience

• Professor: dept. of electrical engineering, indian institute of technology bombay, powai, mumbai 400 076, maharashtra, india, from sep. 2014
• Associate professor: dept. of electrical engineering, indian institute of technology bombay, powai, mumbai 400 076, maharashtra, india, from feb. 2009- aug. 2014
• Assistant professor: dept. of electrical engineering, indian institute of technology bombay, powai, mumbai 400 076, maharashtra, india, from sep. 2007- feb. 2009
• Senior researcher (ra2): dept. of electronics & electrical engineering., university of glasgow (glasgow, uk) aug, 2006-sep. 2007
• Senior researcher: national center for plasma science & technology, school of physical sciences, dublin city university (dublin, ireland),nov, 2005- aug, 2006
• Senior research fellow: dept. of elec. engr. & comp. sc., university of michigan (ann arbor, mi,usa)may, 2001-sep, 2005
• Lecturer: dept. of physics, st. xavier’s college, 30 park street, calcutta 700 016, india. 1997-2000

Journal Papers

  1. Raveesh Gourishetty, Saranya Reddy Shriram, Debi Prasad Panda, Subhananda Chakrabarti, "Analytical Model and Experimental Analysis to Estimate the Interdiffusion and Optoelectronic Properties of Coupled InAs Quantum Dots Post Rapid Thermal Processing", IEEE Transactions on Electron Devices, May 2022. [DOI]
  2. Saranya Reddy Shriram, Raveesh Gourishetty, and Subhananda Chakrabarti, "Quaternary – alloyed capping for strain and band engineering in InAs sub – monolayer quantum dots", Micro and Nanostructures, Mar. 2022. [DOI]
  3. Saranya Reddy Shriram, Raveesh Gourishetty, Debiprasad Panda, Debabrata Das, Suryansh Dongre, Jhuma Saha, and Subhananda Chakrabarti, "Subsiding strain-induced In-Ga intermixing in InAs/In Ga1?As sub-monolayer quantum dots for room temperature photodetectors", Infrared Physics & Technology, vol. 121, pp. 104047, Mar. 2022. [DOI]
  4. Raveesh Gourishetty and Subhananda Chakrabarti, "Effects of In, Sb and N alloyed capping on the electronic band structures of vertically coupled InAs SK-SML quantum dot system", IEEE Transactions on Nanotechnology, Dec. 2021. [DOI]
  5. Raveesh Gourishetty, Debiprasad Panda, Suryansh Dongre, Jhuma Saha, Sanowar Alam Gazi, Subhananda Chakrabarti, "Hybrid strain-coupled multilayer SK and SML InAs/GaAs quantum dot heterostructure: Enabling higher absorptivity and strain minimization for enhanced optical and structural characteristics", Journal of Luminescence, vol. 233, no. 117899, Jan. 2021. [DOI]
  6. Ravindra Kumar, Jhuma Saha, Debiprasad Panda, Ravinder Kumar, Sanowar Alam Gazi, Raveesh Gourishetty, Subhananda Chakrabarti, "Ameliorating the optical and structural properties of InAs quantum dot heterostructures through digital alloy capping materials: Theory and experiment", Optical Materials, Sep. 2020. [DOI]
  7. Debiprasad Panda, Aijaz Ahmad, Hemant Ghadi, Sourav Adhikary, Binita Tongbram, and Subhananda Chakrabarti, "Evidence of quantum dot size uniformity in strain-coupled multilayered In(Ga)As/GaAs QDs grown with constant overgrowth percentage", Journal of Luminescence, Jul. 2017.
  8. H. S. Gupta, A S K. Kumar, S. Chakrabarti, S. Paul, RM Parmar, DRM Shamudraiah, M.Shojaei Baghini, and D. K. Sharma, "Design of Large dynamic range, low power, High precision ROIC for Quantum Dot Infrared Photo-detector", Electronics Letters, vol. 49, no. 16, pp. 1018 – 1020, Aug. 2013.
  9. S. Adhikary and S. Chakrabarti, "A detailed investigation on the impact of post-growth annealing on the materials and device characteristics of 35-layer In0.50Ga0.50As/GaAs quantum dot infrared photodetector with quaternary In0.21Al0.21Ga0.58As capping", Materials Research Bulletin, vol. 47, no. 11, pp. 3317-3322, Nov. 2012.
  10. S. Shah, N. Halder, S. Sengupta, and S. Chakrabarti, "Comparison of Luminescence Properties of Bilayer and Multilayer InAs/GaAs Quantum Dots", Materials Research Bulletin, vol. 47, no. 1, pp. 130-134, Jan. 2012.
  11. jit V. Barve, Saumya Sengupta, Jun Oh Kim, John Montoya, Brianna Klein, Mohammad Ali Shirazi-HD,Marziyeh Zamiri, Yagya D. Sharma,Sourav Adhikary, Sebastián E. Godoy, Woo-Yong Jang, Glauco R. C. Fiorante, S. Chakrabarti and Sanjay Krishna, "Barrier Selection Rules for Quantum Dots-in-a-Well Infrared Photodetector", IEEE Journal of Quantum Electronics, 2012.
  12. S. Sengupta, J. O. Kim, A.V. Barve, S. Adhikary, Y.D. Sharma, N. Gautam, S. J. Lee, S. K. Noh, S. Chakrabarti and S. Krishna, "Sub-monolayer quantum dots in confinement enhanced dots-in-a-well heterostructure", Applied Physics Letters, vol. 100, 2012.
  13. S. Nagar and S. Chakrabarti, "Effect of phosphorus irradiation on the structural, electrical, and optical characteristics of ZnO thin films", Journal of Luminescence, vol. 132, pp. 1089-1094, 2012.
  14. S. Banerjee, N. Halder and S. Chakrabarti, "Self-assembled InGaAs/GaAs Quantum Dot Photodetector on Germanium substrate", Physica Status Solid C, vol. 9, no. 2, pp. 322-325, 2012.
  15. S. Adhikary and S. Chakrabarti, "A detailed investigation on the impact of post-growth annealing on the materials and device characteristics of 35-layer In0.50Ga0.50As/GaAs quantum dot infrared photodetector with quaternary In0.21Al0.21Ga0.58As capping", Materials Research Bulletin, 2012.
  16. R. Makhijani, N. Halder, S. Sengupta and S. Chakrabarti, "Temperature Dependent Photoluminescence Investigation of the Effect of Growth Pause Induced Ripening in InAs/GaAs Quantum Dot Heterostructures", Materials Research Bulletin, vol. 47, no. 3, pp. 820–825, 2012.
  17. N. Halder, S. Adhikary and S. Chakrabarti, "Inhibition of emission wavelength blueshift in annealed InAs/GaAs quantum dot stacks: An important observation for their potential application in photovoltaic devices", Applied Physics A: Materials Science and Processing, vol. 107, no. 4, pp. 977-983, 2012.
  18. A.V. Barve, S. Meesala, S. Sengupta, J. O. Kim, S. Chakrabarti and S. Krishna, "Investigation of Non-uniform Electric Field in Intersubband Quantum Infrared Photodetectors", Applied Physics Letters, vol. 100, 2012.
  19. A. Mandal, N. Halder, U. Verma and S. Chakrabarti, "The impact of monolayer coverage, barrier thickness and growth rate on the thermal stability of photoluminescence of coupled InAs/GaAs quantum dot hetero-structure with quaternary capping of InAlGaAs", Materials Research Bulletin, vol. 47, no. 3, pp. 551–556, 2012.
  20. R. Sreekumar, A. Mandal, and S. Chakrabarti, "Effect of high energy proton irradiation on InAs/GaAs quantum dots: Enhancement of photoluminescence efficiency (upto ~ 7 times) with minimum spectral signature shift", Materials Research Bulletin, vol. 46, no. 11, pp. 1786-1793, Nov. 2011.
  21. R. Sreekumar, A. Mandal and S. Chakrabarti, "Effect of high energy proton irradiation on InAs/GaAs quantum dots: Enhancement of photoluminescence efficiency (upto ~ 7 times) with minimum spectral signature shift", Materials Research Bulletin, vol. 46, no. 11, pp. 1786-1793, Nov. 2011.
  22. K. Ghosh, S. Kundu, N. Halder, S. Messala and S. Chakrabarti, "Annealing of In0.45Ga0.55As/GaAs quantum dots overgrown with large monolayer (11 ML) coverage for applications in thermally stable optoelectronic devices", Solid State Communication, vol. 151, pp. 1394-1399, Oct. 2011.
  23. S Adhikary, N Halder, and S Chakrabarti, "Thermal stability of the peak emission wavelength in multilayer InAs/GaAs QDs capped with a combination capping of InAlGaAs and GaAs", Journal of Nanoscience and Nanotechnology, vol. 11, no. 5, pp. 4067-4072, May 2011.
  24. S Adhikary, N Halder and S Chakrabarti, "Thermal stability of the peak emission wavelength in multilayer InAs/GaAs QDs capped with a combination capping of InAlGaAs and GaAs", Journal of Nanoscience and Nanotechnology, vol. 11, no. 5, pp. 4067-4072, May 2011.
  25. S. Sengupta, S. Shah, N. Halder, and S. Chakrabarti, "Investigation of larger monolayer coverage in the active layer of the bilayer InAs/GaAs quantum dot structure and effects of post-growth annealing", Applied Physics A: Materials Science and Processing, vol. 103, no. 1, pp. 245-250, Apr. 2011.
  26. S. Sengupta, S. Shah, N. Halder and S. Chakrabarti, "Investigation of larger monolayer coverage in the active layer of the bilayer InAs/GaAs quantum dot structure and effects of post-growth annealing", Applied Physics A: Materials Science and Processing, vol. 103, no. 1, pp. 245-250, Apr. 2011.
  27. S. Chakrabarti, S. Adhikary, N. Halder, Y. Aytac, and A. G. U. Perera, "High-performance, long-wave (~10.2 µm) InGaAs/GaAs quantum dot infrared photodetector with quaternary In0.21Al0.21Ga0.58As capping", Applied Physics Letters, vol. 99, no. 18, 2011.
  28. E. McCarthy, R. T. Rajendra Kumar, B. Doggett, S. Chakrabarti, R. J. O’haire, S. B. Newcomb, J. -P. Mosnier, M. O. Henry and E. McGlynn, "Effect of the crystallite mosaic spread on integrated peak intensities in 2?-? measurements of highly crystallographically textured ZnO thin films", Journal of Physics D: Applied Physics, vol. 44, pp. 375401, 2011.
  29. S. Sengupta, N. Halder, and S. Chakrabarti, "Effect of post-growth rapid thermal annealing on bilayer InAs/GaAs quantum dot heterostructure grown with very thin spacer thickness", Materials Research Bulletin, vol. 45, no. 11, pp. 1593-1597, Nov. 2010.
  30. S. Sengupta, N. Halder and S. Chakrabarti, "Effect of post-growth rapid thermal annealing on bilayer InAs/GaAs quantum dot heterostructure grown with very thin spacer thickness", Materials Research Bulletin, vol. 45, no. 11, pp. 1593-1597, Nov. 2010.
  31. S. Adhikary,K. ghosh, s. Chowdhury, N. Halder, and S. Chakrabarti, "An approach to suppress the blueshift of photoluminescence peaks in coupled multilayer InAs/GaAs quantum dots by high temperature post growth annealing", Materials Research Bulletin, vol. 45, no. 10, pp. 1466-1469, Oct. 2010.
  32. S. Adhikary,K. ghosh, s. Chowdhury, N. Halder and S. Chakrabarti, "An approach to suppress the blueshift of photoluminescence peaks in coupled multilayer InAs/GaAs quantum dots by high temperature post growth annealing", Materials Research Bulletin, vol. 45, no. 10, pp. 1466-1469, Oct. 2010.
  33. S. Sengupta, S. Shah, N. Halder, and S. Chakrabarti, "Comparison of single-layer and bilayer InAs/GaAs quantum dots with a higher InAs coverage", Opto-Electronics Review, vol. 18, no. 3, pp. 295-299, Sep. 2010.
  34. S. Sengupta, S. Shah, N. Halder and S. Chakrabarti, "Comparison of single-layer and bilayer InAs/GaAs quantum dots with a higher InAs coverage", Opto-Electronics Review, vol. 18, no. 3, pp. 295-299, Sep. 2010.
  35. S. Chowdhury, S. Adhikary, N. Halder, and S. Chakrabarti , "A Novel Approach to increase emission wavelength of InAs/GaAs quantum dots by using a quaternary capping layer", Opto-Electronics Review, vol. 18, no. 3, pp. 246-249, Sep. 2010.
  36. S. Chowdhury, S. Adhikary, N. Halder and S. Chakrabarti , "A Novel Approach to increase emission wavelength of InAs/GaAs quantum dots by using a quaternary capping layer", Opto-Electronics Review, vol. 18, no. 3, pp. 246-249, Sep. 2010.
  37. T. Patil, P. Mahajan and S. Chakrabarti, "Effect of progressive annealing on Silicon Nanostructures grown by Hot Wire Chemical Vapor Deposition", Superlattices and Microstructures, vol. 48, no. 2, pp. 190-197, Aug. 2010.
  38. N.Halder, Suseendran. J, S. Chakrabarti, M. Herrera, M. Bonds and N. Browning, "Effect of InAlGaAs and GaAs combination barrier thickness on the duration of dot formation in different layers of stacked InAs/GaAs quantum dot heterostructure grown by MBE", Journal of Nanoscience and Nanotechnology, vol. 10, no. 8, pp. 5202-5206(5), Aug. 2010.
  39. Srujan M, K Ghosh, S. Sengupta, and S. Chakrabarti, "Presentation and experimental validation of a model for the effect of thermal annealing on the photoluminescence of self-assembled InAs/GaAs quantum dots", ournal of Applied Physics, vol. 107, pp. 123107, Jun. 2010.
  40. Srujan M, K Ghosh, S. Sengupta and S. Chakrabarti, "Presentation and experimental validation of a model for the effect of thermal annealing on the photoluminescence of self-assembled InAs/GaAs quantum dots", Journal of Applied Physics, vol. 107, pp. 123107, Jun. 2010.
  41. S. Nagar and S. Chakrabarti, "Evidence of p-doping in ZnO films deposited on GaAs", Thin Solid Films, vol. 518, no. 16, pp. 4542-4545, Jun. 2010.
  42. S. Banerjee, N. Halder, and S. Chakrabarti, "Stranski-Krastanow growth of multilayer In(Ga)As/GaAs QDs on Germanium substrate", Applied Physics A: Material Science and Processing, vol. 99, no. 4, pp. 791-795, Jun. 2010.
  43. S. Adhikary, N. Halder, and S. Chakrabarti, "Investigation of strain in self assembled multilayer InAs/GaAs Quantum Dot heterostructures", Journal of Crystal Growth, vol. 312, no. 5, pp. 724-729, Feb. 2010.
  44. S. Adhikary, N. Halder and S. Chakrabarti, "Investigation of strain in self assembled multilayer InAs/GaAs Quantum Dot heterostructures", Journal of Crystal Growth, vol. 312, no. 5, pp. 724-729 , Feb. 2010.
  45. R. Sreekumar, A. Mandal, and S. Chakrabarti, "Effect of heavy ion implantation on self assembled single layer InAs/GaAs quantum dots", Journal of Physics D: Applied Physics, vol. 43, pp. 505302, 2010.
  46. R. Sreekumar, A. Mandal and S. Chakrabarti, "Effect of heavy ion implantation on self assembled single layer InAs/GaAs quantum dots", Journal of Physics D: Applied Physics, vol. 43, pp. 505302, 2010.
  47. Suseendran J, N. Halder, and S. Chakrabarti, "Stacking of multilayer InAs quantum dots with combination capping of InAlGaAs and high temperature grown GaAs", Superlattices and Microstructures, vol. 46, no. 6, pp. 900-906, Dec. 2009.
  48. S. Sengupta, N. Halder, and S. Chakrabarti, "Investigation of effect of varying growth pauses on the structural and optical properties of InAs/GaAs quantum dots heterostructure", Superlattices and Microstructures, vol. 46, no. 4, pp. 611-617, Oct. 2009.
  49. S. Sengupta, N. Halder and S. Chakrabarti, "Investigation of effect of varying growth pauses on the structural and optical properties of InAs/GaAs quantum dots heterostructure", Superlattices and Microstructures, vol. 46, no. 4, pp. 611-617, Oct. 2009.
  50. N. Halder, R. Rashmi, S. Chakrabarti, C. R. Stanley, M. Herrera and N. D. Browning, "A comprehensive study of the effect of in situ annealing at high growth temperature on the morphological and optical properties of self assembled InAs/GaAs QDs", Applied Physics A: Material Science and Processing, vol. 95, pp. 713-720, Apr. 2009.
  51. S. Chakrabarti, N. halder, S. Sengupta, J. Charthad, S. Ghosh, and C. R. Stanley, "Vertical Ordering and Electronic Coupling in Bilayer Nanoscale InAs/GaAs Quantum Dots Separated by a Thin Spacer Layer", Nanotechnology, vol. 19, pp. 505704, Dec. 2008.
  52. S. Chakrabarti, N. halder, S. Sengupta, J. Charthad, S. Ghosh and C. R. Stanley, "Vertical Ordering and Electronic Coupling in Bilayer Nanoscale InAs/GaAs Quantum Dots Separated by a Thin Spacer Layer", Nanotechnology, vol. 19, pp. 505704, Dec. 2008.
  53. S. Chakrabarti, N. Halder, S. Sengupta, J. Charthad, S. Ghosh, and C. R. Stanley , "A detailed PL investigation on the effect of barrier thickness and monolayer coverage on bilayer InAs/GaAs QDs grown at a reduced growth rate", Journal of Nanoelectronics and Optoelectronics, vol. 3, no. 3, pp. 277-280, Dec. 2008.
  54. S. Chakrabarti, N. Halder, S. Sengupta, J. Charthad, S. Ghosh and C. R. Stanley , "A detailed PL investigation on the effect of barrier thickness and monolayer coverage on bilayer InAs/GaAs QDs grown at a reduced growth rate", ”, Journal of Nanoelectronics and Optoelectronics, vol. 3, no. 3, pp. 277-280(4), Dec. 2008.
  55. N. Halder, S. Chakrabarti and C. R. Stanley, "Tunability of Photoluminescence of InAs/GaAs Quantum Dots By growth Pause Induced Ripening", Journal of Nanoscience and Nanotechnology, vol. 8, pp. 6232–6237, Dec. 2008.
  56. Z. K. Wu, H. Choi, X. H. Su, S. Chakrabarti, P. Bhattacharya and T. B. Norris, "Ultrafast Electronic Dynamics in Unipolar n-doped InGaAs/GaAs Self-Assembled Quantum Dots", IEEE Journal of Quantum Electronics, vol. 43, no. 6, pp. 486-496, Jun. 2007.
  57. S. Chakravarty, P. Bhattacharya, S. Chakrabarti, Y. Kang, and M. E. Meyerhoff, "Multimodal Lasing in Photonic Crystal Microcavities", Optics Letters, vol. 32, no. 10, pp. 1296-1298, 2007.
  58. S. Chakrabarti, B. Doggett, R O’Haire, E. McGlynn, M. O. Henry, A. Meaney and J. –P. Mosnier, "Characterization of Nitrogen-doped ZnO Thin Films grown by Plasma-Assisted Pulsed Laser Deposition on Sapphire Substrates", Superlattices and Microstructures, vol. 42, pp. 21-25, 2007.
  59. R. T. Rajendra Kumar, E. McGlynn, C. McLoughlin, S. Chakrabarti, M. Biswas, M. O. Henry, J. –P. Mosnier, K. Kumarappan and G. Hughes, "Control of ZnO Nanorod Array Density By Zn Supersaturation Variation and Effects on Field Emission", Nanotechnology, vol. 18, pp. 215704, 2007.
  60. G. Ariyawansa, A. G. U. Perera, X. H. Su, S. Chakrabarti and P. Bhattacharya, "Multi-color Tunneling quantum dot infrared photodetectors operating at room temperature", Infrared Physics and Technology, vol. 50, pp. 156-161, 2007.
  61. B. Doggett, S. Chakrabarti, R O’Haire, A. Meaney, E. McGlynn, M. O. Henry, and J. –P. Mosnier, "A Characterization of Phosphorus-doped ZnO Thin Films grown by Pulsed Laser Deposition", Superlattices and Microstructures, vol. 42, pp. 72-78, 2007.
  62. A. G. U. Perera, G. Ariyawansa, V. M. Apalkov, S. G. Mastik, X. H. Su, S. Chakrabarti, and P. Bhattacharya, "Wavelenght and Poarization Selective Multi-band Tunneling quantum dot infrared detectors", Opto-Electronics Review, vol. 15, no. 4, pp. 223-228, 2007.
  63. A. G. U. Perera, G. Ariyawansa, V. M. Apalkov, S. G. Mastik, X. H. Su, S. Chakrabarti and P. Bhattacharya, "Wavelength and Polarization Selective Multi-band Tunneling quantum dot infrared detectors", Opto-Electronics Review, vol. 15, no. 4, pp. 223-228, 2007.
  64. S. Chakrabarti, B. Doggett, R O’Haire, E. McGlynn, M. O. Henry, A. Meaney and J. –P. Mosnier, "P-type behavior above room temperature in Nitrogen-doped ZnO Thin film grown by plasma-assisted pulsed laser deposition", Electronics Letters, vol. 42, no. 20, pp. 1181-1182, Sep. 2006.
  65. M. Holub, J. Shin, S. Chakrabarti and P. Bhattacharya, "Spin-polarized Vertical-Cavity Surface-Emitting Laser: Epitaxial Growth Issues and Device Properties", Journal of Vacuum Science and Technology B, vol. 24, no. 3, pp. 1510-1513, May 2006.
  66. J. Topolancik, S. Chakravarty, S. Chakrabarti and P. Bhattacharya, "Electrically injected quantum dot photonic crystal microcavity light sources", Optics Letters , vol. 31, no. 2, pp. 232-234, Jan. 2006.
  67. X. Bai, T. Eckhause, S. Chakrabarti, P. Bhattacharya, R. Merlin and C. Kurdak, "Phonon detection Using Quasi-One Dimensional Quantum Wires", Physica E: Low Dimensional Systems & Nanostructures, vol. 34, pp. 592-595, 2006.
  68. L. A. Farina, X. Bai, C. Kurdak, S. Chakrabarti and P. Bhattacharya, "Study of Quantum Hall Edge States with a Single Electron Transistor Coupled to an Antidot", Physica E: Low Dimensional Systems & Nanostructures, vol. 34, pp. 187-190, 2006.
  69. S. Chakravarty, J. Topolancik, P. Bhattacharya, S. Chakrabarti, Y. Kang and M. E. Meyerhoff, "Ion Detection With Photonic Crystal Microcavities", Optics Letters, vol. 30, no. 19, pp. 2578-2580, Oct. 2005.
  70. M. Holub, J. Shin, S. Chakrabarti and P. Bhattacharya, "Electrically-injected spin-polarized vertical-cavity surface-emitting laser", Applied Physics Letters, vol. 87, no. 19, pp. 091108, Aug. 2005.
  71. X. H. Su, S. Chakrabarti, P. Bhattacharya, G. Ariyawansa and A. G. U. Perera, "A Resonant tunneling quantum Dot Infrared photodetector", IEEE Journal of Quantum Electronics, vol. 41, no. 7, pp. 974-979, Jul. 2005.
  72. S. Chakrabarti, A. D. Stiff-Roberts, X. H. Su, P. Bhattacharya, G. Ariyawansa and A. G. U. Perera, "High Performance Mid-Infrared Quantum Dot Infrared Photodetectors", Journal of Physics D: Applied Physics, Jul. 2005.
  73. P. Bhattacharya, X. H. Su, S. Chakrabarti, G. Ariyawansa and A. G. U. Perera, "Characteristics of a tunneling quantum dot infrared photodetector operating at room temperature", Applied Physics Letters, vol. 86, no. 19, pp. 191106 , May 2005.
  74. S. Chakrabarti, M. Holub, P. Bhattacharya, T. D. Mishima, M. B. Santos, M. B. Johnson and D. A. Blom, "Spin Polarized Light Emitting Diodes with Mn-doped InAs Quantum dots Nanomagnets as Spin Aligner", Nano Letters, vol. 5, no. 2, pp. 209-212, Feb. 2005.
  75. S. Chakrabarti, X. H. Su, P. Bhattacharya, G. Ariyawansa and A. G. U. Perera, "Characteristics of a multi-color InGaAs/GaAs quantum dot infrared photodetector", IEEE Photon. Technol. Lett, vol. 17, pp. 178-180, Jan. 2005.
  76. J. N. Gleason, M. E. Hjelmstad, V. D. Dasika, R. S. Goldman, S. Fathpour, S. Chakrabarti and P. Bhattacharya, "Nanometer-scale studies of point defect distributions in GaMnAs alloys", Applied Physics Letters, vol. 86, pp. 011911, Jan. 2005.
  77. S. Chakravarty, Y. Kang, J. Topolancik, P. Bhattacharya, M. E. Meyerhoff and S. Chakrabarti, "Photonic Crystal Microcavity source-based Chemical Sensor", Proc. SPIE , 2005.
  78. P. Bhattacharya, M. Holub, J. Shin and S. Chakrabarti, "Spin-polarized Semiconductor Light Sources", Proc. SPIE, pp. 31, 2005.
  79. D. Chen, T. E. Murphy, S. Chakrabarti and J. D. Phillips, "Optical Waveguiding In BaTiO3/MgO/AlxOy/GaAs Heterostructures", Applied Physics Letters, vol. 85, pp. 5206-5208, Nov. 2004.
  80. X. H. Su, S. Chakrabarti, A. D. Stiff-Roberts, J. Singh and P. Bhattacharya, "Novel Quantum Dot Photodetector Design Based on Double Barrier Resonant Tunneling", Electronics Letters, vol. 40, pp. 1082-1083, Aug. 2004.
  81. M. Holub, S. Chakrabarti, S. Fathpour, P. Bhattacharya, Y. Lei, and S. Ghosh, "Mn-doped InAs self-organized diluted magnetic quantum dot layers with Curie temperatures above 300K", Applied Physics Letters, vol. 85, pp. 973-975, Aug. 2004.
  82. S. Chakrabarti, A. D. Stiff-Roberts, P. Bhattacharya, and S. Kennerly, "Heterostructures for Achieving Very Large Responsivity in InAs/GaAs Quantum Dot Infrared Photodetectors", Virtual Journal of Nanoscience and Technology, vol. 9, no. 24, Jun. 2004.
  83. S. Fathpour, M. Holub, S. Chakrabarti and P. Bhattacharya, "Spin-polarized quantum dot light emitting diodes with high polarization efficiency at high temperatures", Electronics Letters, vol. 40, no. 4, pp. 694-695, May 2004.
  84. S. Chakrabarti, A. D. Stiff-Roberts, P. Bhattacharya, S. Gunapala, S. Bandara, S.B. Rafol and S. W. Kennerly, "High temperature operation of InAs/GaAs quantum dot infrared photodetector with large responsivity and detectivity", IEEE Photonics Technology Letters , vol. 16, no. 5, pp. 1361-1363, May 2004.
  85. S. Chakrabarti, S. Fathpour, K. Moazzami, J. Phillips, N. Browning and P. Bhattacharya, "Pulsed laser annealing of self-organized InAs/GaAs quantum dots", Journal of Electronic Materials(letters), vol. 33, no. 4, pp. L5- L8, Apr. 2004.
  86. A. D. Stiff-Roberts, X. H. Su, S. Chakrabarti and P. Bhattacharya, "Contribution of field-assisted tunneling emission to dark current in InAs/GaAs quantum dot infrared photodetectors", IEEE Photonics Technology Letters, vol. 16, no. 3, pp. 867-869, Mar. 2004.
  87. S. Chakrabarti, A. D. Stiff-Roberts, P. Bhattacharya and S. W. Kennerly, "High responsivity AlAs/InAs/GaAs superlattice quantum dot infrared photodetector", Electronics Letters, vol. 40, no. 3, pp. 197-198, Feb. 2004.
  88. P. Bhattacharya, S. Fathpour, S. Chakrabarti, M. Holub and S. Ghosh, "Application of Dilute Magnetic Semiconductors and Quantum Dots to Spin Polarized Light Sources", Mater. Res. Soc. Symp. Proc, vol. 794, pp. T8.1.1-T8.1.11 , 2004.
  89. S. Chakrabarti, P. Bhattacharya, A. D. Stiff-Roberts, Y. Y. Lin, J. Singh, Y. Lei, and N. Browning, "Intersubband absorption in annealed InAs/GaAs quantum dots: a case for polarization-sensitive infrared detection", Journal of Physics D: Applied Physics, vol. 36, pp. 1794-1797, Jul. 2003.
  90. B. Kochman, A. D. Stiff-Roberts, S. Chakrabarti, J. D. Phillips, S. Krishna, J. Singh, and P. Bhattacharya, "Absorption, carrier lifetime, and gain in InAs/GaAs quantum dot infrared photodetectors", IEEE Journal of Quantum Electronics, vol. 39, pp. 459-467, Mar. 2003.
  91. A. D. Stiff-Roberts, S. Chakrabarti, S. Pradhan, B. Kochman, P. Bhattacharya, "Raster-scan imaging with normal-incidence, mid-infrared InAs/GaAs quantum dot infrared photodetectors", Applied Physics Letters, vol. 80, pp. 3265-3267, May 2002.
  92. S. Dhar and S. Chakrabarti, "Large photoresponse of CdO/Porous Si diodes", Semicond. Sci. Technol, vol. 15, pp. L.39-L40, Nov. 2000.
  93. S. Chattopadhyay, L. K. Bera, K. Maharatna, S. Chakrabarti, S. Dhar, S. K. Ray and C. K. Maiti, "Schottky diode characteristics of Ti on strained-Si", Solid State Electronics, vol. 41, pp. 1891-1893, Dec. 1997.
  94. S. Dhar and S. Chakrabarti, "Properties of chemically deposited Cu2S films on porous silicon", J. Appl. Phys, vol. 82, pp. 655-657, Jul. 1997.
  95. S. Chakrabarti and S. Dhar, "Temperature-dependent behavior of chalcogenide thin-film contacts on porous silicon", Solid State Phenomena, vol. 55, pp. 77-79, 1997.
  96. S. Dhar and S. Chakrabarti, "Electroless Ni plating on n- and p-type porous Si for ohmic and rectifying contacts", Semicond. Sci. Technol, vol. 11, pp. 1231-1234, Aug. 1996.
  97. S. Dhar and S. Chakrabarti, "Electroless Nickel Plated contacts on Porous silicon", Applied Physics Letters, vol. 68, pp. 1392-1394, Mar. 1996.
  98. P. Chattopadhyay, D. P. Haldar, S. Chakrabarti and M. Ray, "Effect of Deep-level Impurities on the Grain-Boundary Potential of a Polycrystalline Semiconductor", Phys Stat SolidiA-Applied Research, vol. 142, pp. 117-125, Mar. 1994.

Books
  1. S. Adhikary and S. Chakrabarti, "Quaternary Capped In(Ga)AsGaAs Quantum Dot Infrared Photodetectors: From Materials to Devices", Springer, 2017.[PDF] [DOI]

Conference Papers / Book Chapters
  1. Saranya R. Reddy Shriram, Raveesh Gourishetty, Arjun Mandal, Samishta Choudhary, Ajay Kumar, and Subhananda Chakrabarti, "A systematic post-growth thermal annealing step for receding size inhomogeneity inside multiple InAs/Inx(Ga)1-xAs sub-monolayer quantum-dot heterostructures" in Photonic and Phononic Properties of Engineered Nanostructures XII, SPIE, Mar. 2022. [DOI]
  2. Raveesh Gourishetty and Subhananda Chakrabarti , "Impact of GaAsN capping on strain and quantum confinement in vertically coupled InAs/GaAs quantum dots" in Low Dimensional Materials and Devices, International society for optics and photonics, pp.1180018, Aug. 2021. [DOI]
  3. Raveesh Gourishetty, Debi Prasad Panda, Sanowar Alam Gazi, Subhananda Chakrabarti, "Optical and structural investigation of multilayer InAs SK QDs with In0.15Ga0.85As strain-reducing layer electronically coupled to SML QDs grown by molecular beam epitaxy" in Quantum Optics and Photon Counting 2021, International Society for Optics and Photonics, 2021., Apr. 2021. [DOI]
  4. Raveesh Gourishetty, Saranya Reddy Shriram, Debi Prasad Panda, and Subhananda Chakrabarti, "Influence of Sb composition on the band alignment and optical characteristics of strain coupled vertically aligned InAs/GaAsSb quantum dots" in Quantum Optics and Photon Counting 2021, SPIE, Apr. 2021. [DOI]
  5. Raveesh Gourishetty, Debiprasad Panda, Ravinder Kumar, Sanowar Alam Gazi, Subhananda Chakrabarti, "A novel heterostructure with multilayer Stranski-Krastanov QDs heterogeneously coupled to Submonolayer QDs for enhanced optical and material characteristics" in Low-Dimensional Materials and Devices 2020, Aug. 2020. [DOI]
  6. Ankitha E. Bangera, Kumar Appaiah, and Subhananda Chakrabarti, "Surface engineering using compounds of titanium nanocoatings for silicon-based optical devices" in SPIE Photonics West, SPIE, Mar. 2019. [DOI]
  7. H. S. Gupta, A. S. K. Kumar, M. Shojaei Baghini, S. Chakrabarti, S. Paul, S. Mehta, R. S. Chaurasia, A R Chowdhury, and D. K. Sharma, "Implementation of High Performance Read out Integrated Circuit" in IEEE MWSCAS, Aug. 2014.
  8. H. S. Gupta, A. S. K. Kumar, M. Shojaei Baghini, S. Chakrabarti, S. Paul, S. Mehta, R. S. Chaurasia, A R Chowdhury, and D. K. Sharma, "Efficient Implementation of High Performance Read out Integrated Circuit" in IEEE EDSSC, Jun. 2014.
  9. S. Shah, S.Maity, S. Shetty and S. chakrabarti, "Optimizing the Multilayer InAs/GaAs Quantum Dot Heterostructure to Produce Bilayer like Uniformity by Using Annealing and Variable Spacer Thicknesses for Long Wavelength (1.3um or 1.55 um) Applications" in Materials Research Society Meeting, Boston, USA, Nov. 2012.
  10. S. Nagar and S. Chakrabarti, "Dependence of Oxygen Pressure on the Structural, Electrical and Optical Properties of Pulsed Laser Deposited ZnO Thin Films" in Materials Research Society Meeting, Boston, USA, Nov. 2012.
  11. S.Shah,S.Maity, S.Shetty and S. Chakrabarti, "Extension of the bilayer into multilayer InAs/GaAsQuantum dot heterostructurefor application in long wavelength (1.3um) devices and the use of annealing to increase homogeneity" in North American Molecular Beam Epitaxy Conference, Georgia, Atlanta, USA, Oct. 2012.
  12. Sourav Adhikary and Subhananda Chakrabarti, "Evidence of long wave excited state transition at high temperature (200K) in 35 layer In0.50Ga0.5As/GaAs quantum dot infrared photodetector" in North American Molecular Beam Epitaxy Conference, Georgia, Atlanta, USA, Oct. 2012.
  13. Sourav Adhikary, A. G. U. Perera, Yigit Aytac, and Subhananda Chakrabarti , "Demonstration of very large responsivity (~25 A/W) of quaternary capped InAs/GaAs quantum dot infrared photodetector under 45-degree angle incidence measurement" in North American Molecular Beam Epitaxy Conference, Georgia, Atlanta, USA, Oct. 2012.
  14. Sourav Adhikary, A. G. U. Perera, Yigit Aytac and Subhananda Chakrabarti, "Demonstration of very large responsivity (~25 A/W) of quaternary capped InAs/GaAs quantum dot infrared photodetector under 45-degree angle incidence measurement" in North American Molecular Beam Epitaxy Conference, Georgia, Atlanta, USA, Oct. 2012.
  15. S. Sengupta, A. Mandala, K. L. Mathurb, and S.Chakrabartia , "A comprehensive study on MBE grown InAs sub-monolayer quantum dots with different capping combination" in North American Molecular Beam Epitaxy Conference, Georgia, Atlanta, USA, Oct. 2012.
  16. S. Sengupta, A. Mandala, K. L. Mathurb and S.Chakrabarti, "A comprehensive study on MBE grown InAs sub-monolayer quantum dots with different capping combination" in North American Molecular Beam Epitaxy Conference, Georgia, Atlanta, USA, Oct. 2012.
  17. Sourav Adhikary and Subhananda Chakrabarti, "Spectral broadening due to post growth annealing on long wave InGaAs/GaAs quantum dot infared photodetector with quaternary barrier layer" in Electronics Materials Conference 2012, Penn State, USA, Jun. 2012.
  18. A.Mandal, R.Sreekumar, S.K.Gupta, S.Chakrabarti, "10-Fold Enhancement in Photoluminescence Efficiency Due to Low Energy H- Ion Irradiation over InAs/GaAs Quantum Dots" in MRS Spring Meeting, San Francisco, USA, Apr. 2012.
  19. A.Mandal, U.Verma, N.Halder, S.Chakrabarti, "The impact of growth rate and barrier thickness on the thermal stability of photoluminescence for coupled InAs/GaAs quantum dot heterostructures with quaternary(InAlGaAs) capping" in SPIE PHOTONIC WEST,San Francisco, California United States, Jan. 2012.
  20. subho, "Optical and Structural Investigation of MBE grown In(Ga)As/GaAs Quantum Dot Detector Structure on Germanium Substrate" in 38th International Symposium on Compound Semiconductors,Berlin, Germany, May 2011.
  21. A. Mandal, S. Chakrabarti, and S. K. Gupta, "Photoluminescence and Hall study for the production and recovery of defects in phosphorus implanted ZnO films" in SPIE Photonic West, San Francisco, USA, Jan. 2011.
  22. S. Banerjee, N. Halder, and S. Chakrabarti, "Molecular beam epitaxial growth of GaAs/AlGaAs multi quantum well on germanium substrate" in SPIE Photonic West, San Francisco, USA, Jan. 2011.
  23. S. Nagar, S. Chakrabarti, and S. K. Gupta, "Influence of Li implantation on the optical and electrical properties of ZnO film" in SPIE Photonic West, San Francisco, USA, Jan. 2011.
  24. S. Nagar, S. Chakrabarti and S. K. Gupta, "Influence of Li implantation on the optical and electrical properties of ZnO film" in SPIE Photonic West, San Francisco, USA, Jan. 2011.
  25. S. Messala, K. Ghosh, S. Sengupta and S. Chakrabarti, "Theoretical Model on Thermal Annealing of Self-assembled InAs/GaAs Quantum Dots and Its Experimental Validation" in Materials Research Society Meeting, Boston, USA, Dec. 2010.
  26. S. Shah, S. Sengupta and S. Chakrabarti, "Room-temperature Long-wavelength (~1.45?m) Emission from Self-assembled InAs/GaAs Quantum Dots" in Materials Research Society Meeting, Boston, USA, Dec. 2010.
  27. S. Messala, K. Ghosh, S. Sengupta, and S. Chakrabarti, "Theoretical Model on Thermal Annealing of Self-assembled InAs/GaAs Quantum Dots and Its Experimental Validation" in Materials Research Society Meeting, Boston, USA, Nov. 2010.
  28. S. Messala, K. Ghosh, S. Sengupta and S. Chakrabarti, "Theoretical Model on Thermal Annealing of Self-assembled InAs/GaAs Quantum Dots and Its Experimental Validation" in Materials Research Society Meeting, Boston, USA, Nov. 2010.
  29. S. Shah, S. Sengupta, and S. Chakrabarti, "Room-temperature Long-wavelength (~1.45?m) Emission from Self-assembled InAs/GaAs Quantum Dots" in Materials Research Society Meeting, Boston, USA, Nov. 2010.
  30. S. Shah, S. Sengupta and S. Chakrabarti, "Room-temperature Long-wavelength (~1.45?m) Emission from Self-assembled InAs/GaAs Quantum Dots" in Materials Research Society Meeting, Boston, USA, Nov. 2010.
  31. R. Sreekumar, S. Chakrabarti and S.K. Gupta, "Effect of Low Energy Proton Irradiation on Single Layer InAs/GaAs Quantum Dot Heterostructure" in Materials Research Society Meeting, Boston, USA, Nov. 2010.
  32. N. Halder, S. Adhikary, and S.Chakrabarti, "Thermal Stability in Emission Peak in Multilayer InAs/GaAs Quantum Dot Heterostructure in Laser Application" in Electronic Materials conference 2010, Notre Dame, USA, Jun. 2010.
  33. N. Halder, S. Adhikary and S.Chakrabarti, "Thermal Stability in Emission Peak in Multilayer InAs/GaAs Quantum Dot Heterostructure in Laser Application" in Electronic Materials conference 2010, Notre Dame, USA, Jun. 2010.
  34. Srujan M, K. Ghosh, S. Chakrabarti, and S. Sengupta, "Theoretical modelling on thermal annealing of self-assembled InAs/GaAs quantum dots and its experimental validation" in European Material Research society (EMRS) Meeting 2010, Congress Center, Strasbourg, France, Jun. 2010.
  35. Srujan M, K. Ghosh, S. Chakrabarti and S. Sengupta, "Theoretical modelling on thermal annealing of self-assembled InAs/GaAs quantum dots and its experimental validation" in European Material Research society (EMRS) Meeting 2010, Congress Center, Strasbourg, France, Jun. 2010.
  36. S. Banerjee, N. Halder and S. Chakrabarti, "Self Assembled Growth of Nanostructures on Germanium Substrate by Molecular Beam Epitaxy" in European Material Research society (EMRS) Meeting 2010, Congress Center, Strasbourg, France, Jun. 2010.
  37. R. Sreekumar, S. Sengupta, S. Chakrabarti, and and S. K. Gupta, "Investigation of degradation of photoluminescence efficiency in InAs/GaAs quantum dots on heavy ion bombardment" in European Material Research society (EMRS) Meeting 2010, Congress Center, Strasbourg, France, Jun. 2010.
  38. R. Sreekumar, S. Sengupta, S. Chakrabarti, and S. K. Gupta, "Investigation of degradation of photoluminescence efficiency in InAs/GaAs quantum dots on heavy ion bombardment" in European Material Research society (EMRS) Meeting 2010, Congress Center, Strasbourg, France, Jun. 2010.
  39. A. Mandal, S. Kala, and S. Chakrabarti, "High Hall mobility in Antimony-doped p-type ZnO film" in European Material Research society (EMRS) Meeting 2010, Congress Center, Strasbourg, France, Jun. 2010.
  40. A. Mandal, S. Kala and S. Chakrabarti, "High Hall mobility in Antimony-doped p-type ZnO film" in European Material Research society (EMRS) Meeting 2010, Congress Center, Strasbourg, France, Jun. 2010.
  41. R. Sreekumar, S.Sengupta, S. Chakrabarti, and S. K. Gupta, "Enhancement of Luminescence Efficiency in InAs/GaAs Quantum Dots by Proton Irradiation" in Electronic Materials conference 2010, Notre Dame, USA, Jun. 2010.
  42. R. Sreekumar, S.Sengupta, S. Chakrabarti, S. K. Gupta, "Enhancement of Luminescence Efficiency in InAs/GaAs Quantum Dots by Proton Irradiation" in Electronic Materials conference 2010, Notre Dame, USA, Jun. 2010.
  43. A. Mandal and S. Chakrabarti, "Structural and electrical properties of rectifying p-ZnO/n+-InP heterojunction" in SPIE Photonics West in San Francisco, California, USA, Jan. 2010.
  44. S. Sengupta, N. Halder and S. Chakrabarti, "Strain Induced Stoppage of the Emission Peak Blueshift of Annealed Bilayer Quantum Dot Structures Separated by Thin Spacer" in MRS Fall Meeting 2009, Boston, USA, Dec. 2009.
  45. S. Sengupta, N. Halder, and S. Chakrabarti, "Strain Induced Stoppage of the Emission Peak Blueshift of Annealed Bilayer Quantum Dot Structures Separated by Thin Spacer" in MRS Fall Meeting 2009, Boston, USA, Nov. 2009.
  46. A. Mandal and S. Chakrabarti, "Realization of Stable p-type Behavior of ZnO Thin Films Deposited on InP" in MRS Fall Meeting 2009, Boston, USA, Nov. 2009.
  47. S. Chowdhury, S. Adhikary and S. Chakrabarti, "Increasing the size of InAs/GaAs multilayer coupled quantum dots with low defect density by using a InAlGaAs quarternary capping layer" in European Material Research society (EMRS)Fall Meeting 2009, Warsaw Institute of Technology, Warsaw,Poland, Sep. 2009.
  48. A. Mandal and S. Chakrabarti, "High P-type conductivity in Phosphorus-doped ZnO film" in European Material Research society (EMRS)Fall Meeting 2009, Warsaw Institute of Technology, Warsaw, Poland, Sep. 2009.
  49. S. Sengupta and S. Chakrabarti, "A Comparative study of single layer and bi-layer InAs/GaAs quantum dots (QDs) with higher InAs monolayer coverage" in European Material Research society (EMRS)Fall Meeting 2009, Warsaw Institute of Technology, Warsaw, Poland, Sep. 2009.
  50. Suseendran J, N. Halder and S. Chakrabarti, "Strain -induced modifications of dot formation time of InAs quantum dot heterostructure grown by molecular beam epitaxy" in 17th American Conference on Crystal Growth and Epitaxy, Lake Geneva, Wisconsin, USA, Aug. 2009.
  51. S. Adhikary and S. Chakrabarti, "Ivestigation of structural and optical properties of coupled multilayer InAs/GaAs quantum dots with combinational In0.21Al0.21Ga0.58As/ GaAs capping" in European Material Research society (EMRS) Meeting 2009, Congress Center, Strasbourg, France, Jun. 2009.
  52. S. Nagar and S. Chakrabarti, "Evidence of p-doping in ZnO films deposited on GaAs" in European Material Research society (EMRS) Meeting 2009, Congress Center, Strasbourg, France, Jun. 2009.
  53. Suseendran J, N. Halder and S. Chakrabarti , "Effect of InAlGaAs and GaAs combination barrier thickness on the stacking of coupled InAs/GaAs quantum dot layers grown by MBE" in European Material Research society (EMRS) Meeting 2009, Congress Center, Strasbourg, France, Jun. 2009.
  54. P.Mahajan, T. Patil and S. Chakrabarti, "HWCVD-grown Silicon Nanocrystals : A Study of the Effect of Annealing on Structures Evolved with Varying Growth Rates" in MRS Spring Meeting 2009, San Francisco, USA, Apr. 2009.
  55. Suseendran J, N.Halder, S. Sengupta, S. Chakrabarti and T. D. Mishima, "Optimized Stacking of Nanoscale InAs/GaAs Quantum Dots in Multilayer Heterostructures" in 2nd International conference on Frontiers in Nanoscience and Technology (Cochin Nano 2009), Cochin, Jan. 2009.
  56. S. Sengupta, N. Halder, S. Chakrabarti, M. Herrera, and N. G. Browinng, "Investigation of the effect of varying dot ripening time on the structural and optical properties of Nanoscale InAs/GaAs Quantum Dots layer" in 2nd International conference on Frontiers in Nanoscience and Technology (Cochin Nano 2009), Cochin, India, Jan. 2009.
  57. S. Sengupta, N. Halder, S. Chakrabarti, M. Herrera and N. G. Browinng, "Investigation of the effect of varying dot ripening time on the structural and optical properties of Nanoscale InAs/GaAs Quantum Dots layer" in 2nd International conference on Frontiers in Nanoscience and Technology (Cochin Nano 2009), Cochin, Jan. 2009.
  58. N. Halder, J. Charthad and S. Chakrabarti, "TEM and PL Characterization of InAs-GaAs Bi-layer QDs" in PHOTONICS 2008: The International Conference on Fiber Optics and Photonics, New Delhi, India, Dec. 2008.
  59. Prashanthi K, S. Chakrabarti and V. R. Palkar, "Integration of novel multiferroic thin films on GaN/Sapphire and GaAs substrates for high frequency device applications" in 53rd Magnetism and Magnetic Materials Conference,Austin Texas, USA, Nov. 2008.
  60. Prashanthi K, S.P.Duttagupta, S. Chakrabarti and V. R. Palkar, "C-V characteristics of multiferroic Bi0.7Dy0.3FeO3 thin films directly integrated on <100>Silicon" in 53rd Magnetism and Magnetic Materials Conference, Austin Texas, USA, Nov. 2008.
  61. J. Charthad, N.Halder, S. Chakrabarti, Miriam Herrera, Nigel D. Browning and C.R. Stanley, "A Detailed Investigation of the Effect of Ripening Pause on the Structural and Optical Characteristics of InAs/GaAs Quantum Dot" in 2008 Asian Conference on Nanoscience and Nanotechnology(AsiaNANO2008),Biopolis, Singapore, Nov. 2008.
  62. S. Chakrabarti, N. Halder, J. Charthad, S. Ghosh and C. R. STanley, "Effect of Monolayer Coverage and Spacer Thickness on InAs/GaAs Bi-layer QDs grown at a reduced growth rate" in ISCS2008, 35th International Symposium on Compound Semiconductors, Europa-Park, Rust, Germany, Sep. 2008.
  63. S. Chakrabarti, N. Halder and C. R. Stanley, "Optical and Structural Characterization of Coupled Multi-layer InAs/GaAs Quantum Dot Heterostructures Grown by Molecular Beam Epitaxy" in IUMRS-ICEM 2008,International Conference on Electronic Materials, Hilton Sydney, Sydney, Australia, Aug. 2008.
  64. N. Halder and S. Chakrabarti, "Tunability of Photoluminescence of InAs/GaAs Quantum Dots by a Combination of Dot Pause and In0.21Al0.21Ga0.58As Quarternary Capping" in Third international Conference on Luminescence and its Applications (ICLA 2008), National Physical Laboratory, New Delhi, Feb. 2008.
  65. S. Chakrabarti, "Molecular Beam Epitaxial Growth of InAs/GaAs quantum Dot Heterostructures for Intermediate Band Solar Cells" in International conference on solar Cells (IC SOLACE 2008), Jan. 2008.
  66. N. Halder and S. Chakrabarti, "Effect of Ripening pause on the Optical and Structural characteristics of InAs/GaAs Quantum Dots" in International Conference on Emerging Technologies and applications in Engineering, Technology and Sciences,Rajkot, Gujrat, Jan. 2008.
  67. Z. K. Wu, H. Choi, T. B. Norris, X. H. Su, S. Chakrabarti and P. Bhattacharya, "Investigation of spin-induced Pauli blocking on electron dynamics in n-type In0.4Ga0.6As/GaAs quantum dots" in Conference on Lasers and Electro-Optics, Dec. 2007.
  68. S. Chakrabarti, "A High Temperature Two-Color In(Ga)As/GaAs Quantum Dot-based infrared Photodetector" in International Conference on Sensors and Related Networks, Dec. 2007.
  69. S. Chakrabarti and C. Stanley, "III-V growth on Ge" in UK MBE-user Meeting, University of Manchester, Manchester, Apr. 2007.
  70. Z. K. Wu, H. Choi, T. B. Norris, S. Chakrabarti, X. H. Su and P. Bhattacharya, "Electron Dynamics in n-doped In0.4Ga0.6As/GaAs Quantum Dot Infrared Detector Structures" in Conference on Lasers and Electro-Optics, Dec. 2006.
  71. J. P. Mosnier, S. Chakrabarti and B. Doggett, "Material Properties of Nitrogen- and Phosphorus-doped ZnO Thin Films Grown by Plasma-assisted Pulsed Laser Deposition on Sapphire Substrates" in 4th International workshop on ZnO and Related Materials, Germany, Oct. 2006.
  72. G. Ariyawansa, A. G. U. Perera, X. H. Su, S. Chakrabarti and P. Bhattacharya, "Multi-color Tunneling quantum dot infrared photodetectors operating at room temperature" in International Workshop on Quantum Well Infrared Photodetectors, Kandy, Sri Lanka, Jun. 2006.
  73. S. Chakrabarti, B. Doggett, M. Novotny, R. O’Haire, E. McGlynn, M. O. Henry, A. Meaney, and J. P. Mosnier, "Material Properties of Nitrogen-doped ZnO Thin Films Grown by Plasma-assisted Pulsed Laser Deposition on Sapphire Substrates" in European Material Research Society 2006, Nice, France, May 2006.
  74. R. O’Haire, A. Meaney, B. Doggett, S. Chakrabarti, E. McGlynn, M. O. Henry and J. P. Mosnier, "Growth and Characterization of ZnO Nanostructures Grown on Bare and Patterned Sapphire Substrates Using Pulsed Laser Deposition" in European Material Research Society 2006, Nice, France, May 2006.
  75. B. Doggett, S. Chakrabarti, R. O’Haire, E. McGlynn, M. O. Henry and J. P. Mosnier, "A Study of the Material Properties of Phosphorus-doped ZnO Thin Films" in European Material Research Society 2006, Nice, France, May 2006.
  76. S. Chakravarty, Y. Kang, J. Topolancik, P. Bhattacharya, M. E. Meyerhoff and S. Chakrabarti, "Photonic Crystal Microcavity source-based Ion Sensor" in IEEE Sensors, Irvine, CA, Oct. 2005.
  77. S. Chakravarty, Y. Kang, J. Topolancik, P. Bhattacharya, M. E. Meyerhoff, and S. Chakrabarti, "Photonic Crystal Microcavity source-based Chemical Sensor" in Optics East, Boston, MA, Oct. 2005.
  78. M. Holub, J. Shin, S. Chakrabarti and P. Bhattacharya, "Spin-VCSEL: Epitaxial Growth Issues and Device Properties" in North American Molecular Beam Epitaxy Conference, Santa Barbara, CA, Sep. 2005.
  79. P. Bhattacharya, S. Chakrabarti, X. H. Su and A. D. Stiff-Roberts , "Quantum Dot Infrared Photodetectors" in II-VI Workshop, Boston, MA, Sep. 2005.
  80. X. H. Su, S. Chakrabarti, P. Bhattacharya, G. Ariyawansa and A. G. U. Perera, "A Tunnel Quantum Dot Infrared Photodetectors" in 8th International Conference on Intersubband Transition in Quantum Wells, Boston, MA, Sep. 2005.
  81. L. A. Farina, X. Bai, C. Kurdak, S. Chakrabarti and P. Bhattacharya, "Study of Quantum Hall Edge States with a Single Electron Transistor Coupled to an Antidot" in Electronic Properties of Two-Dimensional systems(EP2DS), Albuquerque, NM, Jul. 2005.
  82. X. Bai, T. Eckhause, S. Chakrabarti, P. Bhattacharya, R. Merlin, and C. Kurdak, "Phonon detection Using Quasi-One Dimensional Quantum Wires" in Electronic Properties of Two-Dimensional systems (EP2DS), Albuquerque, NM, Jul. 2005.
  83. X. Bai, T. Eckhause, S. Chakrabarti, P. Bhattacharya, R. Merlin and C. Kurdak, "Phonon detection Using Quasi-One Dimensional Quantum Wires" in Electronic Properties of Two-Dimensional systems(EP2DS), Albuquerque, Jul. 2005.
  84. M. Holub, J. Shin, S. Chakrabarti and P. Bhattacharya, "Electrically-injected spin-polarized quantum well vertical-cavity surface-emitting laser" in Device Research Conference, University of California-Santa Barbara, Santa Barbara, CA, Jun. 2005.
  85. S. Chakravarty, J. Topolancik, S. Chakrabarti and P. Bhattacharya, "Electrically Injected Quantum Dot Bottom-emitting Photonic Crystal Single Mode Microcavity Light Source" in Device Research Conference, University of California-Santa Barbara, Santa Barbara, CA, Jun. 2005.
  86. M. Holub, J. Shin, S. Chakrabarti and P. Bhattacharya, "Spin Injection and Polarization Switching in a Vertical-Cavity Surface-Emitting Laser: A Spin VCSEL" in Conference on Lasers and Electro-Optics, Baltimore, MD, May 2005.
  87. S. Chakrabarti, X. H. Su, G. Ariyawansa, A. G. U. Perera and P. Bhattacharya, "Room Temperature Operation of Resonant Tunneling Quantum Dot Infrared Detectors" in Conference on Lasers and Electro-Optics, Baltimore, MD, May 2005.
  88. P. Bhattacharya, M. Holub, J. Shin and S. Chakrabarti, "Spin-polarized Semiconductor Light Sources" in Photonics West 2005, San Jose, CA, Jan. 2005.
  89. P. Bhattacharya, M. Holub, J. Shin, S. Chakrabarti, A. R. Kovsh, S. S. Mikhrin, I. L. Kresnikov, A. V. Kozhukov, and N. N. Ledentsov, "High Performance Quantum Dot Lasers" in US-Korea Conference, Research Triangle Park, NC, Aug. 2004.
  90. J.N. Gleason, M.E. Hjelmstad, V.D. Dasika, S. Fathpour, S. Chakrabarti, P.K. Bhattacharya nad, and R.S. Goldman, "Nanometer-Scale Studies of Point Defect Distributions in GaMnAs Films" in Gordon Research Conference on Defects in Semiconductors, Colby-Sawyer College, New London, NH, Jul. 2004.
  91. X. H. Su, A. D. Stiff-Roberts, S. Chakrabarti, J. Singh and P. Bhattacharya, "Resonant Tunneling Quantum Dot Infrared Photodetector (RT-QDIP): Separating Dark Current and Photocurrent" in Device Research conference, Notre Dame University, Notre Dame, IN, Jun. 2004.
  92. J.N. Gleason, M.E. Hjelmstad, V.D. Dasika, S. Fathpour, S. Chakrabarti, P.K. Bhattacharya, and R.S. Goldman, "Nanometer-Scale Studies of Point Defect Distributions in GaMnAs Films" in Electronics Materials Conference, Notre Dame University, Notre Dame, IN, Jun. 2004.
  93. M. Holub, S. Chakrabarti, S. Fathpour, P. Bhattacharya, Y. Lei, T. D. Mishima, M. B. Santos, M. B. Johnson and D. A. Blom, "Mn-doped InAs self-organized quantum dos with Curie temperature above 300K" in Electronics Materials Conference, Notre Dame University, Notre Dame, IN, Jun. 2004.
  94. M. Holub, S. Fathpour, S. Chakrabarti, J. Topol’ancik, P. Bhattacharya and Y. Lei, "High-temperature spin-polarized quantum dot light-emitting diodes" in Device Research Conference, Notre Dame University, Notre Dame, IN, Jun. 2004.
  95. S. Fathpour, Z. Mi, S. Chakrabarti, P. Bhattacharya, A. R. Kovsh, S. S. Mikhrin, I. L. Krestnoikov, A. V. Kozhukov and N. N. Ledenstov, "Characteristics of High-Performance 1um and 1.3um Quantum Dot Lasers: Impact of p-doping and Tunnel Injection" in Device Research Conference, Notre Dame University, Notre Dame, IN, Jun. 2004.
  96. J. N. Gleason, M. E. Hjelmstad, V. D. Dasika, , S. Fathpour, S. Chakrabarti, P. Bhattacharya and R. S. Goldman, "Cross Sectional Scanning Tunneling Microscopy Studies of Mn distribution in Ga1-xMxAs" in 31st Conference on the Physics and Chemistry of Semiconductor Interfaces, Kailua-Kona, HI, Jan. 2004.
  97. P. Bhattacharya, A. Stiff-Roberts, S. Chakrabarti, S. Krishna, C. Fischer, T. Norris and J. Uriyama, "Carrier Dynamics in self-organized In(Ga)As/Ga(Al)As quantum dots and their application long wavelength sources and detectors" in Compound semiconductors2002 Institute of Physics Conference, pp.117-124, Dec. 2003.
  98. P. Bhattacharya, S. Fathpour, S. Chakrabarti, M. Holub and S. Ghosh, "Application of Dilute Magnetic Semiconductors and Quantum Dots to Spin Polarized Light Sources" in Mater. Res. Soc. Symp. Proc., Boston , pp.794, Dec. 2003.
  99. A. D. Stiff-Roberts, S. Chakrabarti, P. Bhattacharya, and S. Kennerly, "Tailoring of Quantum Dot Infrared Photodetector Performance with AlAs/GaAs Superlattice Barriers" in Lasers and Electro-Optics Society Meeting, Tucson, AZ, Oct. 2003.
  100. S. Chakrabarti, A. D. Stiff-Roberts, P. Bhattacharya, and S. Kennerly, "Heterostructures for Achieving Very Large Responsivity in InAs/GaAs Quantum Dot Infrared Photodetectors" in North American Conference on Molecular Beam Epitaxy, Keystone, CO, Sep. 2003.
  101. S. Chakrabarti, K. Moazzami, S. Fathpour, P. Bhattacharya and J. Phillips, "Pulsed Laser Annealing of Self-Organized InAs/GaAs Quantum Dots" in Electronics Materials Conference, Salt Lake City, UT, Jun. 2003.
  102. A. D. Stiff-Roberts, S. Chakrabarti, S. Kennerly, and P. Bhattacharya, "High-responsivity, polarization-sensitive, 70-layer InAs/GaAs quantum dot infrared photodetector" in Conference on Lasers and Electro-Optics, Baltimore, Jun. 2003.
  103. P. Bhattacharya, A. Stiff-Roberts, S. Chakrabarti, S. Kennerly, and S. Krishna, (INVITED) , "Quantum Dot Inter-sublevel Transition-Based Devices" in Nano-Optoelectronics Workshop, Berlin, Germany, Jul. 2002.
  104. S. Chakrabarti and S. Dhar, "Current components in a Cu2S-PSi junctions" in 10th International Workshop on Physics of Semiconductor Devices, New Delhi, Dec. 1999.
  105. S. Chakrabarti and S. Dhar, "Photoresponse of CdO/Porous Si junction" in 1st International Conference on Computes and Devices for Communication, Calcutta, Dec. 1998.
  106. S. Chakrabarti and S. Dhar, "Temperature dependent behavior of chalcogenide thin-film contacts on porous silicon" in International Conference on Fiber Optics and Photonics – PHOTONICS’96, Madras, Dec. 1996.
  107. S. Chakrabarti and S. Dhar, "A Chalcogenide- Porous Si Photodiode" in 3rd International Conference on Semiconductor Material and Technology, New Delhi, Dec. 1996.
  108. S. Chakrabarti and S. Dhar, "Ohmic Contacts to Porous Silicon by electroless nickel plating" in 8th International Workshop on Physics of Semiconductor Devices, New Delhi, Dec. 1995.

Contributed Chapters To A Book
  1. P. Bhattacharya, A. D. Stiff-Roberts, X. H. Su, S. Chakrabarti and C. H. Fischer, "Intersubband Optoelectronic Devices", Edited by R. Paiella and O. Manasreh, Intersubband Transition in Quantum Dots, McGraw-Hill, New York .

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  • Visit Website

  • Department of Electrical Engineering
    IIT Bombay, Powai
    Mumbai 400 076, India

  • (O): +91-22-2576-7421
    (R): +91-22-2576-8421
  • subho@ee.iitb.ac.in
  • Visit Website

IIT Bombay was established in the year 1957 and the department of Electrical Engineering (EE) has been one of its major departments since its inception.

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IIT Bombay was established in the year 1957 and the department of Electrical Engineering (EE) has been one of its major departments since its inception.

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IIT Bombay was established in the year 1957 and the department of Electrical Engineering (EE) has been one of its major departments since its inception.

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